ZHCSQH7E
November 2021 – November 2024
TUSB2E11
PRODUCTION DATA
1
1
特性
2
应用
3
说明
4
Device Version Comparison
4.1
Device Variants
5
Pin Configuration and Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Switching Characteristics
6.7
Timing Requirements
6.8
Typical Characteristics
7
Parameter Measurement Information
8
Detailed Description
8.1
Overview
8.2
Functional Block Diagram
8.3
Feature Description
8.4
Device Functional Modes
8.4.1
Repeater Mode
8.4.2
Power Down Mode
8.4.3
Disabled Mode
8.4.4
UART Mode
8.4.5
Auto-Resume ECR
8.4.6
L2 State Interrupt Modes
8.4.7
Attach Detect Interrupt Mode
8.4.8
GPIO Mode
8.4.9
USB 2.0 High-Speed HOST Disconnect Detection
8.4.10
Frame Based Low Power Mode
8.4.11
Battery Charging
8.5
Manufacturing Test Modes
8.5.1
USB DP Test Procedure
8.5.2
USB DM Test Procedure
8.6
I2C Target Interface
9
Register Access Protocol (RAP)
10
Register Map
10.1
TUSB2E11 Registers
11
Application and Implementation
11.1
Application Information
11.2
Typical Application
11.2.1
Design Requirements
11.2.2
Detailed Design Procedure
11.2.3
Application Curves
11.3
Power Supply Recommendations
11.3.1
Power Up Reset
11.4
Layout
11.4.1
Layout Guidelines
11.4.2
Example Layout for Application with 1.8V I2C Variant
12
Device and Documentation Support
12.1
Device Support
12.1.1
第三方产品免责声明
12.2
Documentation Support
12.2.1
Related Documentation
12.3
接收文档更新通知
12.4
支持资源
12.5
Trademarks
12.6
静电放电警告
12.7
术语表
13
Revision History
14
Mechanical, Packaging, and Orderable Information
12.6
静电放电警告
静电放电 (ESD) 会损坏这个集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理和安装程序,可能会损坏集成电路。
ESD 的损坏小至导致微小的性能降级,大至整个器件故障。精密的集成电路可能更容易受到损坏,这是因为非常细微的参数更改都可能会导致器件与其发布的规格不相符。