ZHCSFK1D July   2016  – January 2025 TLV700XX-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Internal Current Limit
      2. 6.3.2 Shutdown
      3. 6.3.3 Dropout Voltage
      4. 6.3.4 Undervoltage Lockout (UVLO)
    4. 6.4 Device Functional Modes
      1. 6.4.1 Operation with VIN Less Than 2V
      2. 6.4.2 Operation with VIN Greater Than 2V
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Input and Output Capacitor Requirements
      2. 7.1.2 Transient Response
      3. 7.1.3 Thermal Protection
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Input Capacitance
        2. 7.2.2.2 Output Capacitance
        3. 7.2.2.3 Thermal Calculation
      3. 7.2.3 Application Curve
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Board Layout Recommendations to Improve PSRR and Noise Performance
      3. 7.4.3 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Device Nomenclature
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 接收文档更新通知
    4. 8.4 支持资源
    5. 8.5 Trademarks
    6. 8.6 静电放电警告
    7. 8.7 术语表
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

6.3.3 Dropout Voltage

The TLV700xx-Q1 uses a PMOS pass transistor to achieve low dropout. When (VIN – VOUT) is less than the dropout voltage (VDO), the PMOS pass device is in the linear region of operation and the input-to-output resistance is the rDS(on) of the PMOS pass element. VDO scales approximately with output current because the PMOS device behaves as a resistor in dropout.

As with any linear regulator, PSRR and transient response are degraded when (VIN – VOUT) approaches dropout. This effect is illustrated in Figure 5-13 in the Typical Characteristics section.