DATA SHEET
TCAN1042-Q1具有 CAN FD 和故障保护功能的汽车类 CAN 收发器
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1 特性
- AEC-Q100（等级 1）：符合汽车应用要求
- 符合 ISO 11898-2:2016 和
ISO 11898-5:2007 物理层标准 - 提供功能安全
- “Turbo”CAN：
- 所有器件均支持经典 CAN 和 2Mbps CAN FD（灵活数据速率），而“G”选项支持 5Mbps
- 具有较短的对称传播延迟时间和快速循环次数，可增加时序裕量
- 在有负载 CAN 网络中实现更快的数据速率
- EMC 性能：支持 SAE J2962-2 和 IEC 62228-3（最高 500kbps）无需共模扼流圈
- I/O 电压范围支持 3.3V 和 5V MCU
- 未供电时具有理想无源行为
- 总线和逻辑引脚处于高阻态
（无负载） - 在总线和 RXD 输出上实现上电/断电无干扰运行
- 总线和逻辑引脚处于高阻态
- 保护特性
- IEC ESD 保护高达 ±15kV
- 总线故障保护：±58V（非 H 型号）和 ±70V（H 型号）
- VCC 和 VIO
（仅限 V 型号）电源终端具有欠压保护 - 驱动器显性超时 (TXD DTO) - 数据速率低至 10kbps
- 热关断保护 (TSD)
- 接收器共模输入电压：±30V
- 典型循环延迟：110ns
- 结温范围为 –55°C 至 150°C
- 采用 SOIC (8) 封装和无引线 VSON (8) 封装 (3.0mm x 3.0mm)，提高了自动光学检测 (AOI) 能力
2 应用
- 汽车和运输
- 所有器件均支持高负载 CAN 网络
- 重型机械 ISOBUS 应用 –
ISO 11783 - 针对汽车应用的 SAE J2284 高速 CAN
- GMW3122 双线制 CAN 物理层
- 符合 SAE J2962、GIFT/ICT、ISO16845 的要求
3 说明
这款 CAN 收发器系列符合 ISO1189-2 (2016) 高速 CAN（控制器局域网络）物理层标准。所有器件均设计用于数据速率高达 2Mbps（兆位每秒）的 CAN FD 网络。器件型号包含“G”后缀的器件旨在实现高达 5Mbps 的数据速率，器件型号包含“V”后缀的器件配有提供 I/O 电平的辅助电源输入，用于设置输入引脚阈值和 RXD 输出电平。该系列具备低功耗待机模式及远程唤醒请求特性。此外，所有器件都提供多种保护特性来提高器件和网络的耐用性。
器件信息
| 器件型号 | 封装(1) | 封装尺寸 |
|---|---|---|
| TCAN1042x-Q1 | SOIC (8) | 4.90mm × 3.91mm |
| VSON (8) | 3.00mm x 3.00mm |
(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附录。
引脚 5 的功能取决于器件；在不含 V 后缀的器件上为无连接
(NC) 引脚，在包含 V 后缀的器件上为用于 I/O 电平转换的 VIO 引脚
RXD 逻辑输出在不含“V”后缀的器件上驱动为
VCC，而在包含“V”后缀的器件上驱动为 VIO。
功能方框图4 Revision History
Changes from Revision C (March 2019) to Revision D (October 2021)
- 添加了特性：EMC 性能：..Go
- 添加了特性 “提供功能安全型”Go
- 更改了汽车特性，删除了温度和分类等级Go
- Deleted "Product Preview" from the DRB pin images in the Pin Configurations and Functions Go
- Added footnote to the GND pin in the Pin Functions table Go
- Changed the ESD Ratings table, added HBM and CDM classification levelsGo
- Changed the DRB (VSON) values in the Thermal Information table Go
- Changed the title in Section 9.3.7.1 Go
- Changed the title in Section 9.3.7.2 Go
Changes from Revision B (May 2017) to Revision C (March 2019)
- Changed the ICC MAX value From: 180 mA To: 110 mA in the Electrical Characteristics Go
- Changed the tWK_FILTER MAX value From: 1.85 µs To: 1.8 µs in the Switching Characteristics Go
Changes from Revision A (May 2016) to Revision B (May 2017)
- 将特性 “符合发布的 ISO 11898-2:2007 和 ISO 11898-2:2003 物理层标准”更改为“符合 ISO 11898-2:2016 和 ISO 11898-5:2007 物理层标准”Go
- 删除了特性：符合 2015 年 12 月 17 日发布的 ISO 11898-2 物理层更新草案Go
- 将“特性”从“所有器件均支持 2Mbps CAN FD..”更改为“所有器件均支持经典 CAN 和 2Mbps CAN FD..”Go
- 添加了特性 “可采用 SOIC(8) 封装和无引线 VSON(8) 封装...”Go
- 将应用 从“重型机械 ISO11783”更改为“重型机械 ISOBUS 应用 – ISO 11783”Go
- 更改了应用 列表Go
- 将特性 从“EMC：SAE J2962、GIFT/ICT、ISO 16845”更改为“符合 SAE J2962、GIFT/ICT、ISO16845 的要求”Go
- Added new devices to the Device Comparison Table Go
- Added Storage temperature range to the Section 7.1 tableGo
- Changed the ESD Ratings table to show the D(SOIC) and DRB (VSON) valuesGo
- Changed Charged Device Model (CDM) From: ±750 To: ±1500 in the ESD Ratings tableGo
- Changed TBD to values for the DRB (VSON) Package in the ESD Ratings tableGo
- Added the DRB package to the Thermal Information table Go
- Added the Power Rating table Go
- Changed VSYM in the Driver Electrical Characteristics tableGo
- Changed VSYM_DC in the Driver Electrical Characteristics tableGo
- Deleted "VI = 0.4 sin (4E6 π t) + 2.5 V" from the Test Condition of CI in the Receiver Electrical Characteristics tableGo
- Deleted "VI = 0.4 sin (4E6 π t)" in the Test Condition of CID in the Receiver Electrical Characteristics tableGo
- Added "-30 V ≤ VCM ≤ +30" to the Test Condition of RID and RIN in the Receiver Electrical Characteristics tableGo
- Changed the tMODE TYP value From: 1 µs To: 9 µS in the Switching Characteristics tableGo
- Added Note 2 and Changed Table 9-2, BUS OUTPUT columGo
- Changed Section 9.4.3 section Go
Changes from Revision * (March 2016) to Revision A (May 2016)
- 添加了特性 “符合发布的 ISO 11898-2:2007 和 ISO 11898-2:2003 物理层标准”Go
- 将特性 从“符合 ISO11898-2 (2016) 标准的要求”更改为“符合 2015 年 12 月 17 日发布的 ISO 11898-2 物理层更新草案”Go
- 更改了应用 列表Go
- 向器件信息 表中添加了 VSON (8) 引脚封装Go
- Added the VSON (8) pin package to the Pin Configuration and Functions Go
- Added V(Diff) to the Section 7.1 table Go
- Changed OTP to TSD in the Functional Block Diagram Go
- Added Note 2 to Table 9-1 Go
- Added Note 1 to Table 9-2 Go
- Added pin number to the Section 12.2 image Go
5 Device Comparison Table
| DEVICE NUMBER |
BUS FAULT PROTECTION | 5-Mbps FLEXIBLE DATA RATE | 3-V LEVEL SHIFTER INTEGRATED | PIN 8 MODE SELECTION |
|---|---|---|---|---|
| TCAN1042-Q1 (Base) | ±58 V | Low Power Standby Mode with Remote Wake | ||
| TCAN1042G-Q1 | ±58 V | X | ||
| TCAN1042GV-Q1 | ±58 V | X | X | |
| TCAN1042V-Q1 | ±58 V | X | ||
| TCAN1042H-Q1 | ±70 V | |||
| TCAN1042HG-Q1 | ±70 V | X | ||
| TCAN1042HGV-Q1 | ±70 V | X | X | |
| TCAN1042HV-Q1 | ±70 V | X |
6 Pin Configurations and Functions
Figure 6-1 D Package for Base, (H), (G) and (HG) Devices8 PIN (SOIC)Top View
Figure 6-3 D Package for (V), (HV), (GV), and (HGV) Devices8 PIN (SOIC)Top View
Figure 6-2 DRB Package for Base, (H), (G) and (HG) Devices8 PIN (VSON)Top View
Figure 6-4 DRB Package for (V), (HV), (GV), and (HGV) Devices8 PIN (VSON)Top ViewTable 6-1 Pin Functions
| PINS | TYPE | DESCRIPTION | ||
|---|---|---|---|---|
| NAME | Base, (H), (G), (HG) | (V), (GV), (HV), (HGV) | ||
| TXD | 1 | 1 | DIGITAL INPUT | CAN transmit data input (LOW for dominant and HIGH for recessive bus states) |
| GND(1) | 2 | 2 | GND | Ground connection |
| VCC | 3 | 3 | POWER | Transceiver 5-V supply voltage |
| RXD | 4 | 4 | DIGITAL OUTPUT | CAN receive data output (LOW for dominant and HIGH for recessive bus states) |
| NC | 5 | — | — | No Connect |
| VIO | — | 5 | POWER | Transceiver I/O level shifting supply voltage (Devices with "V" suffix only) |
| CANL | 6 | 6 | BUS I/O | Low level CAN bus input/output line |
| CANH | 7 | 7 | BUS I/O | High level CAN bus input/output line |
| STB | 8 | 8 | DIGITAL INPUT | Standby Mode control input (active high) |
(1) For DRB (VSON) package options, the thermal pad may be connected to GND in order to optimize the thermal characteristics of the package.
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2)
| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| VCC | 5-V bus supply voltage range | –0.3 | 7 | V | |
| VIO | I/O Level Shifting Voltage Range | Devices with the "V" suffix | –0.3 | 7 | V |
| VBUS | CAN Bus I/O voltage range (CANH, CANL) | Devices without the "H" suffix | –58 | 58 | V |
| V(Diff) | Max differential voltage between CANH and CANL | Devices without the “H” suffix | –58 | 58 | V |
| VBUS | CAN Bus I/O voltage range (CANH, CANL) | Devices with the "H" suffix | –70 | 70 | V |
| V(Diff) | Max differential voltage between CANH and CANL | Devices with the “H” suffix | –70 | 70 | V |
| V(Logic_Input) | Logic input terminal voltage range (TXD, STB) | –0.3 | 7 and VI ≤ VIO + 0.3 | V | |
| V(Logic_Output) | Logic output terminal voltage range (RXD) | –0.3 | 7 and VI ≤ VIO + 0.3 | V | |
| IO(RXD) | RXD (Receiver) output current | –8 | 8 | mA | |
| TJ | Virtual junction temperature range (see Thermal Information) | –55 | 150 | °C | |
| TSTG | Storage temperature range (see Thermal Information) | –65 | 150 | °C | |
(1) Operation outside the Absolute Maximum Ratings may cause permanent
device damage. Absolute Maximum Ratings do not imply functional operation
of the device at these or any other conditions beyond those listed under
Recommended Operating Conditions. If used outside the Recommended
Operating Conditions but within the Absolute Maximum Ratings, the
device may not be fully functional, and this may affect device reliability,
functionality, performance, and shorten the device lifetime.
(2) All voltage values, except differential I/O bus voltages, are with respect to ground terminal.
7.2 ESD Ratings
| VALUE | UNIT | ||||
|---|---|---|---|---|---|
| VESD | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | HBM classification level 3A for all pins | ±6000 | V |
| HBM classification level 3B for global pins CANH and CANL with respect to GND | ±16000 | V | |||
| Charged-device model (CDM), per AEC Q100-011 CDM classification level C6 for all pins |
±1500 | V | |||
|
Machine Model (MM), in accordance to JEDEC Standard 22, Test Method A115 |
±200 |
V |
|||
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
7.3 ESD Ratings, Specifications
| TEST CONDITIONS | VALUE | UNIT | |||
|---|---|---|---|---|---|
| D (SOIC) Package | |||||
| System Level Electro-Static Discharge (ESD) | CAN bus terminals (CANH, CANL) to GND | SAE J2962-2 per ISO 10605: Powered Air Discharge | ±15000 | V | |
| SAE J2962-2 per ISO 10605: Powered Contact Discharge | ±8000 | ||||
| System Level Electro-Static Discharge (ESD) | CAN bus terminals (CANH, CANL) to GND | IEC 61000-4-2: Unpowered Contact Discharge | ±15000 | V | |
| IEC 61000-4-2: Powered on Contact Discharge | ±8000 | ||||
| System Level Electrical fast transient (EFT) | CAN bus terminals (CANH, CANL) to GND | IEC 61000-4-4: Criteria A | ±4000 | V | |
| ISO7637-2 Transients according to GIFT - ICT CAN EMC test specification(1) | CAN bus terminals (CANH, CANL) to GND | Pulse 1 | –100 | V | |
| Pulse 2 | +75 | ||||
| Pulse 3a | –150 | ||||
| Pulse 3b | +100 | ||||
| ISO7637-3 Transients | CAN bus terminals (CANH, CANL) to GND | Direct Coupling Capacitor "Slow Transient Pulse" with 100 nF coupling capacitor - Powered | ±85 | ||
| DRB (VSON) Package | |||||
| System Level Electro-Static Discharge (ESD) | CAN bus terminals (CANH, CANL) to GND | SAE J2962-2 per ISO 10605: Powered Air Discharge | ±15000 | V | |
| SAE J2962-2 per ISO 10605: Powered Contact Discharge | ±8000 | ||||
| System Level Electro-Static Discharge (ESD) | CAN bus terminals (CANH, CANL) to GND | IEC 61000-4-2: Unpowered Contact Discharge | ±14000 | V | |
| IEC 61000-4-2: Powered on Contact Discharge | ±8000 | ||||
| System Level Electrical fast transient (EFT) | CAN bus terminals (CANH, CANL) to GND | IEC 61000-4-4: Criteria A | ±4000 | V | |
| ISO7637-2 Transients according to GIFT - ICT CAN EMC test specification(1) | CAN bus terminals (CANH, CANL) to GND | Pulse 1 | –100 | V | |
| Pulse 2 | +75 | ||||
| Pulse 3a | –150 | ||||
| Pulse 3b | +100 | ||||
| ISO7637-3 Transients | CAN bus terminals (CANH, CANL) to GND | Direct Coupling Capacitor "Slow Transient Pulse" with 100 nF coupling capacitor - Powered | ±85 | ||
(1) ISO7637 is a system level transient test. Results given here are specific to the GIFT-ICT CAN EMC Test specification conditions. Different system level configurations may lead to different results.
7.4 Recommended Operating Conditions
| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| VCC | 5-V Bus Supply Voltage Range | 4.5 | 5.5 | V | |
| VIO | I/O Level-Shifting Voltage Range | 3 | 5.5 | ||
| IOH(RXD) | RXD terminal HIGH level output current | –2 | mA | ||
| IOL(RXD) | RXD terminal LOW level output current | 2 | |||
7.5 Thermal Information
| Thermal Metric(1) | TEST CONDITIONS | TCAN1042-Q1 | UNIT | ||
|---|---|---|---|---|---|
| D (SOIC) | DRB (VSON) | ||||
| 8 Pins | 8 Pins | ||||
| RθJA | Junction-to-air thermal resistance | High-K thermal resistance(2) | 105.8 | 48.3 | °C/W |
| RθJB | Junction-to-board thermal resistance(3) | 46.8 | 17.2 | °C/W | |
| RθJC(TOP) | Junction-to-case (top) thermal resistance(4) | 48.3 | 37.6 | °C/W | |
| ΨJT | Junction-to-top characterization parameter(5) | 8.7 | 1.8 | °C/W | |
| ΨJB | Junction-to-board characterization parameter(6) | 46.2 | 17.1 | °C/W | |
| TTSD | Thermal shutdown temperature | 170 | 170 | °C | |
| TTSD_HYS | Thermal shutdown hysteresis | 5 | 5 | °C | |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, High-K board, as specified in JESD51-7, in an environment described in JESD51-2a.
(3) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8.
(4) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(5) The junction-to-top characterization parameter, ΨJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6) The junction-to-board characterization parameter, ΨJB estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).
7.6 Power Rating
| PARAMETER | TEST CONDITIONS | POWER DISSIPATION | UNIT | ||
|---|---|---|---|---|---|
| PD | Average power dissipation | VCC = 5 V, VIO = 5 V (if applicable), TJ = 27°C, RL = 60 Ω, S at 0 V, Input to TXD at 250 kHz, CL_RXD = 15 pF. Typical CAN operating conditions at 500 kbps with 25% transmission (dominant) rate. | 52 | mW | |
| VCC = 5.5 V, VIO = 5.5 V (if applicable), TJ = 150°C, RL = 50 Ω, S at 0 V, Input to TXD at 500 kHz, CL_RXD = 15 pF. Typical high load CAN operating conditions at 1 Mbps with 50% transmission (dominant) rate and loaded network. | 124 | mW | |||
7.7 Electrical Characteristics
Over recommended operating conditions with TA = –55°C to 125°C (unless otherwise noted).
| PARAMETER | TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| Supply Characteristics | |||||||
| ICC | 5-V supply current | Normal mode (dominant) | See Figure 8-1, TXD = 0 V, RL = 60 Ω, CL = open, RCM = open, STB = 0 V, Typical Bus Load | 40 | 70 | mA | |
| See Figure 8-1, TXD = 0 V, RL = 50 Ω, CL = open, RCM = open, STB = 0 V, High Bus Load | 45 | 80 | |||||
| Normal mode (dominant – with bus fault) | See Figure 8-1, TXD = 0 V, STB = 0 V, CANH = -12 V, RL = open, CL = open, RCM = open | 110 | |||||
| Normal mode (recessive) | See Figure 8-1, TXD = VCC or VIO, RL = 50 Ω, CL = open, RCM = open, STB = 0 V | 1.5 | 2.5 | ||||
| Standby mode | Devices with the "V" suffix (I/O level-shifting), VCC not needed in Standby mode, See Figure 8-1, TXD = VIO, RL = 50 Ω, CL = open, RCM = open, STB = VIO | 0.5 | 5 | µA | |||
| Devices without the "V" suffix (5-V only), See Figure 8-1, TXD = VCC, RL = 50 Ω, CL = open, RCM = open, STB = VCC | 22 | ||||||
| IIO | I/O supply current | Normal mode | RXD floating, TXD = STB = 0 or 5.5 V | 90 | 300 | ||
| Standby mode | RXD floating, TXD = STB = VIO, VCC = 0 or 5.5 V | 12 | 17 | ||||
| UVVCC | Rising undervoltage detection on VCC for protected mode | All devices | 4.2 | 4.4 | V | ||
| Falling undervoltage detection on VCC for protected mode | 3.8 | 4.0 | 4.25 | ||||
| VHYS(UVVCC) | Hysteresis voltage on UVVCC | 200 | mV | ||||
| UVVIO | Undervoltage detection on VIO for protected mode | Devices with the "V" suffix (I/O level-shifting) | 1.3 | 2.75 | V | ||
| VHYS(UVVIO) | Hysteresis voltage on UVVIO for protected mode | 80 | mV | ||||
| STB Terminal (Mode Select Input) | |||||||
| VIH | High-level input voltage | Devices with the "V" suffix (I/O level-shifting) | 0.7 x VIO | V | |||
| Devices without the "V" suffix (5-V only) | 2 | ||||||
| VIL | Low-level input voltage | Devices with the "V" suffix (I/O level-shifting) | 0.3 x VIO | ||||
| Devices without the "V" suffix (5-V only) | 0.8 | ||||||
| IIH | High-level input leakage current | STB = VCC = VIO = 5.5 V | -2 | 2 | µA | ||
| IIL | Low-level input leakage current | STB = 0V, VCC = VIO = 5.5 V | –20 | 0 | -2 | ||
| Ilkg(OFF) | Unpowered leakage current | STB = 5.5 V, VCC = VIO = 0 V | -1 | 0 | 1 | ||
| TXD Terminal (CAN Transmit Data Input) | |||||||
| VIH | High-level input voltage | Devices with the "V" suffix (I/O level-shifting) | 0.7 x VIO | V | |||
| Devices without the "V" suffix (5-V only) | 2 | ||||||
| VIL | Low-level input voltage | Devices with the "V" suffix (I/O level-shifting) | 0.3 x VIO | ||||
| Devices without the "V" suffix (5-V only) | 0.8 | ||||||
| IIH | High-level input leakage current | TXD = VCC = VIO = 5.5 V | –2.5 | 0 | 1 | µA | |
| IIL | Low-level input leakage current | TXD = 0 V, VCC = VIO = 5.5 V | –100 | -25 | –7 | ||
| Ilkg(OFF) | Unpowered leakage current | TXD = 5.5 V, VCC = VIO = 0 V | –1 | 0 | 1 | ||
| CI | Input capacitance | VIN = 0.4 x sin(2 x π x 2 x 106 x t) + 2.5 V | 5 | pF | |||
| RXD Terminal (Can Receive Data Output) | |||||||
| VOH | High-level output voltage | Devices with the "V" suffix (I/O level-shifting), See Figure 8-2, IO = –2 mA. | 0.8 × VIO | V | |||
| Devices without the "V" suffix (5V only), See Figure 8-2, IO = –2 mA. | 4 | 4.6 | |||||
| VOL | Low-level output voltage | Devices with the "V" suffix (I/O level-shifting), See Figure 8-2, IO = +2 mA. | 0.2 x VIO | ||||
| Devices without the "V" suffix (5-V only), See Figure 8-2, IO = +2 mA. | 0.2 | 0.4 | |||||
| Ilkg(OFF) | Unpowered leakage current | RXD = 5.5 V, VCC = 0 V, VIO = 0 V | –1 | 0 | 1 | µA | |
| Driver Electrical Characteristics | |||||||
| VO(DOM) | Bus output voltage (dominant) | CANH | See Figure 8-1 and Figure 9-3, TXD = 0 V, STB = 0 V, 50 Ω ≤ RL ≤ 65 Ω, CL = open, RCM = open | 2.75 | 4.5 | V | |
| CANL | 0.5 | 2.25 | |||||
| VO(REC) | Bus output voltage (recessive) | CANH and CANL | See Figure 8-1 and Figure 9-3, TXD = VCC or VIO, VIO = VCC, STB = 0 V , RL = open (no load), RCM = open | 2 | 0.5 × VCC | 3 | |
| VO(STB) | Bus output voltage (Standby mode) | CANH | See Figure 8-1 and Figure 9-3, STB = VIO, RL = open (no load), RCM = open | -0.1 | 0 | 0.1 | |
| CANL | -0.1 | 0 | 0.1 | ||||
| CANH - CANL | -0.2 | 0 | 0.2 | ||||
| VOD(DOM) | Differential output voltage (dominant) | CANH - CANL | See Figure 8-1 and Figure 9-3, TXD = 0 V, STB = 0 V, 45 Ω ≤ RL < 50 Ω, CL = open, RCM = open | 1.4 | 3 | ||
| See Figure 8-1 and Figure 9-3, TXD = 0 V, STB = 0 V, 50 Ω ≤ RL ≤ 65 Ω, CL = open, RCM = open | 1.5 | 3 | |||||
| See Figure 8-1 and Figure 9-3, TXD = 0 V, STB = 0 V, RL = 2240 Ω, CL = open, RCM = open | 1.5 | 5 | |||||
| VOD(REC) | Differential output voltage (recessive) | CANH - CANL | See Figure 8-1 and Figure 9-3, TXD = VCC, STB = 0 V, RL = 60 Ω, CL = open, RCM = open | –120 | 12 | mV | |
| See Figure 8-1 and Figure 9-3, TXD = VCC, STB = 0 V, RL = open (no load), CL = open, RCM = open | –50 | 50 | |||||
| VSYM | Output symmetry (dominant or recessive) ( VO(CANH) + VO(CANL)) / VCC | See Figure 8-1 and Figure 10-2, STB at 0 V, Rterm = 60 Ω, Csplit = 4.7 nF, CL = open, RCM = open, TXD = 250 kHz, 1 MHz | 0.9 | 1.1 | V/V | ||
| VSYM_DC | DC Output symmetry (dominant or recessive) (VCC – VO(CANH) – VO(CANL)) | See Figure 8-1 and Figure 9-3, STB = 0 V, RL = 60 Ω, CL = open, RCM = open | –0.4 | 0.4 | V | ||
| IOS(SS_DOM) | Short-circuit steady-state output current, dominant, Normal mode | See Figure 9-3 and Figure 8-7, STB at 0 V, VCANH = -5 V to 40 V, CANL = open, TXD = 0 V | –100 | mA | |||
| See Figure 9-3 and Figure 8-7, STB at 0 V, VCANL = -5 V to 40 V, CANH = open, TXD = 0 V | 100 | ||||||
| IOS(SS_REC) | Short-circuit steady-state output current, recessive, Normal mode | See Figure 9-3 and Figure 8-7, STB at 0 V, –27 V ≤ VBUS ≤ 32 V, Where VBUS = CANH = CANL, TXD = VCC | –5 | 5 | mA | ||
| Receiver Electrical Characteristics | |||||||
| VCM | Common mode range, Normal mode | See Figure 8-2 and Table 8-1, STB = 0 V | -30 | +30 | V | ||
| VIT+ | Positive-going input threshold voltage, Normal mode | See Figure 8-2, Table 9-5 and Table 8-1, STB = 0 V, -20 V ≤ VCM ≤ +20 V | 900 | mV | |||
| VIT– | Negative-going input threshold voltage, Normal mode | 500 | |||||
| VIT+ | Positive-going input threshold voltage, Normal mode | See Figure 8-2, Table 9-5 and Table 8-1, STB = 0 V, -30 V ≤ VCM ≤ +30 V | 1000 | ||||
| VIT– | Negative-going input threshold voltage, Normal mode | 400 | |||||
| VHYS | Hysteresis voltage (VIT+ - VIT–), Normal mode | See Figure 8-2, Table 9-5 and Table 8-1, STB = 0 V | 120 | ||||
| VCM | Common mode range, Standby mode | Devices with the "V" suffix (I/O level-shifting), See Figure 8-2, Table 9-5 and Table 8-1, STB = VIO, 4.5 V ≤ VIO ≤ 5.5 V | -12 | 12 | V | ||
| Devices with the "V" suffix (I/O level-shifting), See Figure 8-2, Table 9-5 and Table 8-1, STB = VIO, 3.0 V ≤ VIO ≤ 4.5 V | -2 | +7 | |||||
| Devices without the "V" suffix (5V only), See Figure 8-2, Table 9-5 and Table 8-1, STB = VCC | -12 | 12 | |||||
| VIT(STANDBY) | Input threshold voltage, Standby mode | STB = VCC or VIO | 400 | 1150 | mV | ||
| ILKG(IOFF) | Power-off (unpowered) bus input leakage current | CANH = CANL = 5 V, VCC = VIO = 0 V | 4.8 | µA | |||
| CI | Input capacitance to ground (CANH or CANL) | TXD = VCC, VIO = VCC | 24 | 30 | pF | ||
| CID | Differential input capacitance (CANH to CANL) | TXD = VCC, VIO = VCC | 12 | 15 | |||
| RID | Differential input resistance | TXD = VCC = VIO = 5 V, STB = 0 V, -30 V ≤ VCM ≤ +30 V | 30 | 80 | kΩ | ||
| RIN | Input resistance (CANH or CANL) | 15 | 40 | ||||
| RIN(M) | Input resistance matching: [1 – RIN(CANH) / RIN(CANL)] × 100% | VCANH = VCANL = 5 V | –2% | +2% | |||
(1) All typical values are at 25°C and supply voltages of VCC = 5 V and VIO = 5 V (if applicable), RL = 60 Ω.
7.8 Switching Characteristics
Over recommended operating conditions with TA = -55°C to 125°C
(unless otherwise noted)
| PARAMETER | TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| Device Switching Characteristics | |||||||
| tPROP(LOOP1) | Total loop delay, driver input (TXD) to receiver output (RXD), recessive to dominant | See Figure 8-4, STB = 0
V, RL = 60 Ω, CL = 100 pF, CL(RXD) = 15 pF |
100 | 160 | ns | ||
| tPROP(LOOP2) | Total loop delay, driver input (TXD) to receiver output (RXD), dominant to recessive | 110 | 175 | ||||
| tMODE | Mode change time, from Normal to Standby or from Standby to Normal | See Figure 8-3 | 9 | 45 | µs | ||
| tWK_FILTER | Filter time for valid wake up pattern | 0.5 | 1.8 | µs | |||
| Driver Switching Characteristics | |||||||
| tpHR | Propagation delay time, high TXD to driver recessive (dominant to recessive) | See Figure 8-1, STB = 0
V, RL = 60 Ω, CL = 100 pF, RCM = open |
75 | ns | |||
| tpLD | Propagation delay time, low TXD to driver dominant (recessive to dominant) | 55 | |||||
| tsk(p) | Pulse skew (|tpHR - tpLD|) | 20 | |||||
| tR | Differential output signal rise time | 45 | |||||
| tF | Differential output signal fall time | 45 | |||||
| tTXD_DTO | Dominant timeout | See Figure 8-6, STB = 0
V, RL = 60 Ω, CL = open |
1.2 | 3.8 | ms | ||
| Receiver Switching Characteristics | |||||||
| tpRH | Propagation delay time, bus recessive input to high output (Dominant to Recessive) | See Figure 8-2, STB = 0
V, CL(RXD) = 15 pF |
65 | ns | |||
| tpDL | Propagation delay time, bus dominant input to low output (Recessive to Dominant) | 50 | ns | ||||
| tR | RXD Output signal rise time | 10 | ns | ||||
| tF | RXD Output signal fall time | 10 | ns | ||||
| FD Timing Parameters | |||||||
| tBIT(BUS) | Bit time on CAN bus output pins with tBIT(TXD) = 500 ns, all devices | See Figure 8-5 , STB = 0
V, RL = 60 Ω, CL = 100 pF, CL(RXD) = 15 pF, ΔtREC = tBIT(RXD) - tBIT(BUS) |
435 | 530 | ns | ||
| Bit time on CAN bus output pins with tBIT(TXD) = 200 ns, G device variants only | 155 | 210 | |||||
| tBIT(RXD) | Bit time on RXD output pins with tBIT(TXD) = 500 ns, all devices | 400 | 550 | ||||
| Bit time on RXD output pins with tBIT(TXD) = 200 ns, G device variants only | 120 | 220 | |||||
| ΔtREC | Receiver timing symmetry with tBIT(TXD) = 500 ns, all devices | -65 | 40 | ||||
| Receiver timing symmetry with tBIT(TXD) = 200 ns, G device variants only | -45 | 15 | |||||
(1) All typical values are at 25°C
and supply voltages of VCC = 5 V and VIO = 5 V (if
applicable), RL = 60 Ω
7.9 Typical Characteristics
| VCC = 5 V | VIO = 3.3 V | RL = 60 Ω |
| CL = Open | RCM = Open | STB = 0 V |
| VCC = 5 V | VIO = 3.3 V | RL = 60 Ω |
| CL = Open | RCM = Open | STB = 0 V |
| VIO = 5 V | STB = 0 V | RL = 60 Ω |
| CL = Open | RCM = Open | Temp = 25°C |
| VCC = 5 V | VIO = 3.3 V | RL = 60 Ω |
| CL = 100 pF | CL_RXD = 15 pF | STB = 0 V |
8 Parameter Measurement Information
Figure 8-1 Driver
Test Circuit and Measurement
Figure 8-2 Receiver
Test Circuit and MeasurementTable 8-1 Receiver Differential Input
Voltage Threshold Test
| INPUT (See Figure 8-2 | OUTPUT | |||
|---|---|---|---|---|
| VCANH | VCANL | |VID| | RXD | |
| -29.5 V | -30.5 V | 1000 mV | L | VOL |
| 30.5 V | 29.5 V | 1000 mV | L | |
| -19.55 V | -20.45 V | 900 mV | L | |
| 20.45 V | 19.55 V | 900 mV | L | |
| -19.75 V | -20.25 V | 500 mV | H | VOH |
| 20.25 V | 19.75 V | 500 mV | H | |
| -29.8 V | -30.2 V | 400 mV | H | |
| 30.2 V | 29.8 V | 400 mV | H | |
| Open | Open | X | H | |
Figure 8-3 tMODE Test Circuit and Measurement
Figure 8-4 TPROP(LOOP) Test Circuit and Measurement
Figure 8-5 CAN FD
Timing Parameter Measurement
Figure 8-6 TXD
Dominant Timeout Test Circuit and Measurement
Figure 8-7 Driver
Short Circuit Current Test and Measurement9 Detailed Description
9.1 Overview
These CAN transceivers meet the ISO11898-2 (2016) High Speed CAN (Controller Area Network) physical layer standard. They are designed for data rates in excess of 1 Mbps for CAN FD and enhanced timing margin / higher data rates in long and highly-loaded networks. These devices provide many protection features to enhance device and CAN robustness.
