TIDUES0F June   2019  – April 2026 TMS320F28P550SG , TMS320F28P550SJ , TMS320F28P559SG-Q1 , TMS320F28P559SJ-Q1

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Key System Specifications
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Highlighted Products
      1. 2.2.1  UCC21710
      2. 2.2.2  UCC14141Q1
      3. 2.2.3  AMC1311
      4. 2.2.4  AMC1302
      5. 2.2.5  OPA320
      6. 2.2.6  AMC1306M05
      7. 2.2.7  AMC1336
      8. 2.2.8  TMCS1133
      9. 2.2.9  TMS320F280039C
      10. 2.2.10 TLVM13620
      11. 2.2.11 ISOW1044
      12. 2.2.12 TPS2640
    3. 2.3 System Design Theory
      1. 2.3.1 Dual Active Bridge Analogy With Power Systems
      2. 2.3.2 Dual-Active Bridge – Switching Sequence
      3. 2.3.3 Dual-Active Bridge – Zero Voltage Switching (ZVS)
      4. 2.3.4 Dual-Active Bridge - Design Considerations
        1. 2.3.4.1 Leakage Inductor
        2. 2.3.4.2 Soft Switching Range
        3. 2.3.4.3 Effect of Inductance on Current
        4. 2.3.4.4 Phase Shift
        5. 2.3.4.5 Capacitor Selection
          1. 2.3.4.5.1 DC-Blocking Capacitors
        6. 2.3.4.6 Switching Frequency
        7. 2.3.4.7 Transformer Selection
        8. 2.3.4.8 SiC MOSFET Selection
      5. 2.3.5 Loss Analysis
        1. 2.3.5.1 SiC MOSFET and Diode Losses
        2. 2.3.5.2 Transformer Losses
        3. 2.3.5.3 Inductor Losses
        4. 2.3.5.4 Gate Driver Losses
        5. 2.3.5.5 Efficiency
        6. 2.3.5.6 Thermal Considerations
  9. 3Circuit Description
    1. 3.1 Power Stage
    2. 3.2 DC Voltage Sensing
      1. 3.2.1 Primary DC Voltage Sensing
      2. 3.2.2 Secondary DC Voltage Sensing
        1. 3.2.2.1 Secondary Side Battery Voltage Sensing
    3. 3.3 Current Sensing
    4. 3.4 Power Architecture
      1. 3.4.1 Auxiliary Power Supply
      2. 3.4.2 Gate Driver Bias Power Supply
      3. 3.4.3 Isolated Power Supply for Sense Circuits
    5. 3.5 Gate Driver Circuit
    6. 3.6 Additional Circuitry
    7. 3.7 Simulation
      1. 3.7.1 Setup
      2. 3.7.2 Running Simulations
  10. 4Hardware, Software, Testing Requirements, and Test Results
    1. 4.1 Required Hardware and Software
      1. 4.1.1 Hardware
      2. 4.1.2 Software
        1. 4.1.2.1 Getting Started With Software
        2. 4.1.2.2 Pin Configuration
        3. 4.1.2.3 PWM Configuration
        4. 4.1.2.4 High-Resolution Phase Shift Configuration
        5. 4.1.2.5 ADC Configuration
        6. 4.1.2.6 ISR Structure
    2. 4.2 Test Setup
    3. 4.3 PowerSUITE GUI
    4. 4.4 LABs
      1. 4.4.1 Lab 1
      2. 4.4.2 Lab 2
      3. 4.4.3 Lab 3
      4. 4.4.4 Lab 4
      5. 4.4.5 Lab 5
      6. 4.4.6 Lab 6
      7. 4.4.7 Lab 7
    5. 4.5 Test Results
      1. 4.5.1 Closed-Loop Performance
  11. 5Design Files
    1. 5.1 Schematics
    2. 5.2 Bill of Materials
    3. 5.3 Altium Project
    4. 5.4 Gerber Files
    5. 5.5 Assembly Drawings
  12. 6Related Documentation
    1. 6.1 Trademarks
  13. 7Terminology
  14. 8About the Author
  15. 9Revision History

3.4.3 Isolated Power Supply for Sense Circuits

To generate the isolated supply for the isolated amplifiers and modulators the low-side gate driver bias supply is reused. The 15V isolated rail is converted down to a 5V rail using a TLV760 with fixed 5V output. A series resistor is used at the input to reduce the power dissipated in the LDO.

TIDA-010054 Supply for Voltage and Current Sense Derived From Gate Driver Bias Supplies Figure 3-12 Supply for Voltage and Current Sense Derived From Gate Driver Bias Supplies