TIDT257A February   2022  – October 2022

 

  1.   Description
  2.   Features
  3.   Application
  4. 1Test Prerequisites
    1. 1.1 Voltage and Current Requirements
    2. 1.2 Considerations
    3. 1.3 Dimensions
  5. 2Testing and Results
    1. 2.1 Efficiency Graphs
    2. 2.2 Efficiency Data
      1. 2.2.1 THD Optimization
    3. 2.3 Thermal Images
      1. 2.3.1 Low-Side GaN Junction Temperature
    4. 2.4 Thermal Mechanical Design
      1. 2.4.1 Design Parameters
      2. 2.4.2 Thermal Resistance Calculation
      3. 2.4.3 Heat-Sink Diagrams
    5. 2.5 EMI
  6. 3Waveforms
    1. 3.1 AC Drop
    2. 3.2 Load Transients
    3. 3.3 Start-Up Sequence

2.4.1 Design Parameters

  • Power Device: LMG3522R030 GaN top cooled | IPT60R022S7 Infineon bottom cooled
  • Ambient temperature: 55°C
  • Airflow: 12 m/s
  • Daughter card PCB: 62 mm × 36 mm, 69 mil, 6 layer, 1-oz copper, FR4 High tg
  • GaN Cooling: Top side Heat sink 40 mm × 29 mm × 6 mm, Aluminum, Z40-6.3B
  • GaN Thermal Interface Material (TIM1): T-work9000 at 50 psi (R = 0.031(℃ in2) / W) 1 mm
  • Low frequency FETs Cooling: Bottom side Heat sink 17.5 mm × 29 mm × 7 mm, Aluminum, Z35-6.3B
  • Low frequency FETs Adhesive Type (TIM2): Tgard TNC-4 at 25–35 psi (R = 0.3(℃ in2) / W) 0.127 mm