TIDT257A February   2022  – October 2022

 

  1.   Description
  2.   Features
  3.   Application
  4. 1Test Prerequisites
    1. 1.1 Voltage and Current Requirements
    2. 1.2 Considerations
    3. 1.3 Dimensions
  5. 2Testing and Results
    1. 2.1 Efficiency Graphs
    2. 2.2 Efficiency Data
      1. 2.2.1 THD Optimization
    3. 2.3 Thermal Images
      1. 2.3.1 Low-Side GaN Junction Temperature
    4. 2.4 Thermal Mechanical Design
      1. 2.4.1 Design Parameters
      2. 2.4.2 Thermal Resistance Calculation
      3. 2.4.3 Heat-Sink Diagrams
    5. 2.5 EMI
  6. 3Waveforms
    1. 3.1 AC Drop
    2. 3.2 Load Transients
    3. 3.3 Start-Up Sequence

Low-Side GaN Junction Temperature

Using the LMG3522 internal temperature reporting, the PWM signal from the TEMP pin is measured to calculate the die temperature. Measurements are taken under the same conditions as the thermal images, see the following tables.

Table 2-4 LS PWM Temperature Reading (65 kHz)
Condition Temperature (°C)
Minimum 63.91
Average 66.57
Maximum 68.95
Table 2-5 LS PWM Temperature Reading (100 kHz)
Condition Temperature (°C)
Minimum 77.66
Average 78.70
Maximum 80.16