SNVU792 September   2021 LM5152-Q1

 

  1.   Trademarks
  2. 1Introduction
    1. 1.1 Applications
    2. 1.2 Features
  3. 2EVM Setup
    1. 2.1 EVM Characteristics
    2. 2.2 EVM Connectors and Test Points
  4. 3Test Setup and Procedures
    1. 3.1 Equipment
  5. 4Test Results
    1. 4.1 Efficiency
    2. 4.2 Loop Response
    3. 4.3 Thermal Performance
    4. 4.4 Typical Waveforms
  6. 5PCB Layers
  7. 6Schematic
  8. 7Bill of Materials

7 Bill of Materials

Section 7 details the EVM bill of materials.

Table 7-1 Bill of Materials
DESIGNATOR QTY VALUE DESCRIPTION PACKAGE REFERENCE PART NUMBER MANUFACTURER
C2, C24, C25, C26 4 120 µF CAP ALUM POLY HYB 120UF 50 V SMD RADIAL EEH-ZC1H121P Panasonic
C3 1 1000 pF CAP, CERM, 1000 pF, 50 V, ±10%, X7R, 0603 603 C0603X102K5RACTU Kemet
C4 1 0.1 μF CAP, CERM, 0.1 μF, 50 V, ±10%, X7R, 0603 603 C1608X7R1H104K080AA TDK
C5, C7 2 0.01 μF CAP, CERM, 0.01 µF, 100 V, ±10%, X7R, 0603 603 885012206114 Wurth Elektronik
C6, C8, C9, C10, C11 5 10 μF CAP, CERM, 10 μF, 50 V, ±10%, X7R, 1210 1210 GRM32ER71H106KA12L MuRata
C12, C13, C14, C15, C22, C31, C32 7 0.1 μF CAP, CERM, 0.1 μF, 100 V, ±10%, X7R, AEC-Q200 Grade 1, 0603 603 GCJ188R72A104KA01D MuRata
C16, C17, C18, C19, C20, C21 6 10 μF CAP, CERM, 10 µF, 50 V, ±10%, X7R, 1210 1210 CL32B106KBJNNWE Samsung
C23 1 100 pF CAP, CERM, 100 pF, 50 V, ±5%, C0G/NP0, AEC-Q200 Grade 0, 0603 603 CGA3E2NP01H101J080AA TDK
C29 1 4.7 μF CAP, CERM, 4.7 μF, 16 V, ±10%, X6S, 0603 603 C1608X6S1C475K080AC TDK
C33 1 100 pF CAP, CERM, 100 pF, 50 V, ±1%, C0G/NP0, 0603 603 C0603C101F5GACTU Kemet
C34 1 0.33 μF CAP, CERM, 0.33 μF, 10 V, ±10%, X5R, 0603 603 C0603C334K8PACTU Kemet
C35, C36 2 0.22 μF CAP, CERM, 0.22 μF, 50 V, ±10%, X7R, AEC-Q200 Grade 1, 0603 603 CGA3E3X7R1H224K080AB TDK
C37 1 6800 pF CAP, CERM, 6800 pF, 50 V, ±5%, C0G/NP0, 0603 603 GRM1885C1H682JA01D MuRata
C38 1 4700 pF CAP, CERM, 4700 pF, 100 V, ±5%, C0G/NP0, 0603 603 C0603C472J1GAC7867 Kemet
C39 1 100 pF CAP, CERM, 100 pF, 50 V, ±5%, C0G/NP0, 0603 603 C0603C101J5GACTU Kemet
C40 1 470 pF CAP, CERM, 470 pF, 50 V, ±5%, C0G/NP0, 0603 603 06035A471JAT2A AVX
D1 1 60 V Diode, Schottky, 60 V, 1 A, SOD-123F SOD-123F PMEG6010CEH,115 Nexperia
H1, H2, H3, H4 4 Machine Screw, Round, #4-40 x 1/4, Nylon, Philips panhead Screw NY PMS 440 0025 PH B&F
H5, H6, H7, H8 4 Standoff, Hex, 0.5"L #4-40 Nylon Standoff 1902C Keystone
J1, J2, J4, J5 4 TERMINAL SCREW PC 30AMP, TH 12.9 × 6.3 × 7.9 mm 8199 Keystone
J3, J6 2 TEST POINT SLOTTED .118", TH Slot 1040 Keystone
J7, J12, J13, J14 4 Header, 100 mil, 3 × 1, Gold, TH 3 × 1 Header TSW-103-07-G-S Samtec
J8 1 Header, 100mil, 7 × 1, Gold, TH 7 × 1 Header TSW-107-07-G-S Samtec
J9, J10, J11 3 Header, 100 mil, 2 × 1, Gold, TH 2 × 1 Header TSW-102-07-G-S Samtec
L2 1 1 μH Inductor, Shielded, Composite, 1 μH, 25 A, 0.00255 Ω, SMD 7.2 × 7 × 7.5 mm XAL7070-102MEB Coilcraft
Q1 1 60 V MOSFET, N-CH, 60 V, 100 A, AEC-Q101, SO-8FL SO-8FL NVMFS5C645NLWFAFT1G ON Semiconductor
ALT 40 V MOSFET N-CH 40-V 27-A/100-A TDSON TDSON-8 FL BSC022N04LS6 Infineon
Q4 1 60 V MOSFET, N-CH, 60 V, 17 A, AEC-Q101, SO-8FL SO-8FL NVMFS5C670NLWFAFT1G ON Semiconductor
ALT 40 V MOSFET N-CH 40-V 27-A/100-A TDSON TDSON-8 FL BSC022N04LS6 Infineon
R2 1 0 RES, 0, 5%, 2 W, 2512 WIDE 2512 WIDE RCL12250000Z0EG Vishay Draloric
R3A 1 3 m 3 ±1% 1-W Chip Resistor Wide 1206 1206 WSL06123L000FEA Vishay
R4, R5, R8, R11, R15 5 0 RES, 0, 5%, 0.1 W, AEC-Q200 Grade 0, 0603 603 ERJ-3GEY0R00V Panasonic
R6 1 100 RES, 100, 1%, 0.1 W, 0603 603 RC0603FR-07100RL Yageo
R10 1 2 RES, 2.0, 5%, 0.1 W, AEC-Q200 Grade 0, 0603 603 CRCW06032R00JNEA Vishay-Dale
R12 1 0 RES, 0, 5%, 0.1 W, 0603 603 RC0603JR-070RL Yageo
R13 1 100 k RES, 100 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 603 CRCW0603100KFKEA Vishay-Dale
R14 1 36.5 k RES, 36.5 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 603 CRCW060336K5FKEA Vishay-Dale
R16 1 1.00 k RES, 1.00 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 603 CRCW06031K00FKEA Vishay-Dale
R18, R19 2 80.6 k RES, 80.6 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 603 CRCW060380K6FKEA Vishay-Dale
R20 1 8.66 k RES, 8.66 k, 1%, 0.1 W, 0603 603 RC0603FR-078K66L Yageo
R21 1 49.9 k RES, 49.9 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 603 ERJ-3EKF4992V Panasonic
R22 1 22.6 k RES, 22.6 k, 1%, 0.1 W, 0603 603 RC0603FR-0722K6L Yageo
R23 1 56.2 k RES, 56.2 k, 1%, 0.1 W, 0603 603 RC0603FR-0756K2L Yageo
R24 1 41.2 k RES, 41.2 k, 1%, 0.1 W, 0603 603 RC0603FR-0741K2L Yageo
SH-J1, SH-J2, SH-J3, SH-J4 4 Single Operation 2.54mm Pitch Open Top Jumper Socket 2.54mm M7582-05 Harwin
TP1, TP2, TP6, TP7 4 Test Point, Miniature, Red, TH Red Miniature 5000 Keystone
TP3 1 Test Point, Miniature, SMT Miniature 5015 Keystone
TP4, TP5, TP8, TP9 4 Test Point, Miniature, Black, TH Black Miniature 5001 Keystone
U1 1 Automotive Low-IQ Synchronous Boost Controller for Start-stop VQFN20 LM5152QRGRRQ1 Texas Instruments
C1 0 2200 pF CAP, CERM, 2200 pF, 100 V, ±10%, X7R, 0603 603 GRM188R72A222KA01D MuRata
C27, C28 0 0.1 μF CAP, CERM, 0.1 μF, 100 V, ±10%, X7R, AEC-Q200 Grade 1, 0603 603 GCJ188R72A104KA01D MuRata
C30 0 0.1 μF CAP, CERM, 0.1 μF, 50 V, ±10%, X7R, 0603 603 C1608X7R1H104K080AA TDK
C41 0 100 pF CAP, CERM, 100 pF, 50 V, ±1%, C0G/NP0, 0603 603 C0603C101F5GACTU Kemet
L1 0 1 μH Inductor, Shielded, Composite, 1 μH, 21.8 A, 0.00455 Ω, SMD XAL7030 XAL7030-102MEB Coilcraft
Q2 0 60 V MOSFET, N-CH, 60 V, 100 A, AEC-Q101, SO-8FL SO-8FL NVMFS5C645NLWFAFT1G ON Semiconductor
Q3 0 60 V MOSFET, N-CH, 60 V, 17 A, AEC-Q101, SO-8FL SO-8FL NVMFS5C670NLWFAFT1G ON Semiconductor
R1 0 2 RES, 2.00, 1%, 0.5 W, AEC-Q200 Grade 0, 1210 1210 ERJ-14BQF2R0U Panasonic
R3 0 0.003 RES, 0.003, 1%, 3 W, AEC-Q200 Grade 0, 2512 WIDE 2512 WIDE KRL6432E-M-R003-F-T1 Susumu Co Ltd
R7 0 0 RES, 0, 5%, 0.1 W, AEC-Q200 Grade 0, 0603 603 ERJ-3GEY0R00V Panasonic
R9 0 2 RES, 2.0, 5%, 0.1 W, AEC-Q200 Grade 0, 0603 603 CRCW06032R00JNEA Vishay-Dale
R17 0 80.6k RES, 80.6 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 603 CRCW060380K6FKEA Vishay-Dale