SLUP412 February   2022 LMG3522R030-Q1

 

  1. 1 Introduction
  2. 2 Comparing Different Technologies
  3. 3 Advantages of Integrating the Driver With GaN FETs
  4. 4 The GaN-Based 6.6-kW OBC Reference Design
  5. 5 PFC Stage
  6. 6 DC/DC Stage
  7. 7 DC/DC Topology Selection
  8. 8 Frequency Selection
  9. 9 Core Loss
  10. 10Loss of ZVS
  11. 11Dead Time
  12. 12ISR Bandwidth
  13. 13Overall
  14. 14Resonant Tank Design
  15. 15Thermal Solution
  16. 16Layout Best Practices
  17. 17Control-Loop Considerations
  18. 18Conclusions
  19. 19References
  20. 20Important Notice

19 References

  1. Texas Instruments: Designing a High-Power Bidirectional AC/DC Power Supply Using SiC FETs.
  2. Texas Instruments. Sept. 8, 2021. GaN-Based, 6.6-kW, Bidirectional, Onboard Charger Reference Design. TI reference design No. PMP22650. Accessed Sept. 19, 2021.
  3. Texas Instruments. n.d. Bidirectional CLLLC Resonant Dual Active Bridge (DAB) Reference Design for HEV/EV Onboard Charger. TI reference design No. TIDM-02002. Accessed Sept. 19, 2021.
  4. Texas Instruments. n.d. 98.6% Efficiency 6.6-kW Totem-Pole PFC Reference Design for HEV/EV Onboard Charger. TI reference design No. TIDA-01604. Accessed Sept. 19, 2021.
  5. Texas Instruments: Optimizing GaN Performance with an Integrated Driver.
  6. Texas Instruments: Direct-Drive Configuration for GaN Devices.
  7. Texas Instruments: LMG352xR030-Q1 650-V 30-mΩ GaN FET with Integrated Driver, Protection, and Temperature Reporting.
  8. Texas Instruments: Power Factor Correction (PFC) Circuit Basics.
  9. “Electromagnetic compatibility of multimedia equipment – Emission requirements.” Comité International Spécial des Perturbations Radioélectriques (CISPR) 32: 2015. CISPR: Geneva, Switzerland, October 2019.
  10. Texas Instruments: GaN FET-Based CCM Totem-Pole Bridgeless PFC.
  11. Texas Instruments: Analytic Expressions for Currents in the CCM PFC Stage.