SLUP412 February   2022 LMG3522R030-Q1

 

  1. 1 Introduction
  2. 2 Comparing Different Technologies
  3. 3 Advantages of Integrating the Driver With GaN FETs
  4. 4 The GaN-Based 6.6-kW OBC Reference Design
  5. 5 PFC Stage
  6. 6 DC/DC Stage
  7. 7 DC/DC Topology Selection
  8. 8 Frequency Selection
  9. 9 Core Loss
  10. 10Loss of ZVS
  11. 11Dead Time
  12. 12ISR Bandwidth
  13. 13Overall
  14. 14Resonant Tank Design
  15. 15Thermal Solution
  16. 16Layout Best Practices
  17. 17Control-Loop Considerations
  18. 18Conclusions
  19. 19References
  20. 20Important Notice

13 Overall

Taking into consideration the volumetric benefits of GaN and the aforementioned frequency-related challenges, we decided that a 500-kHz resonant frequency with an upper frequency limit of 800 kHz would provide the best overall size without the negative side effects.