SLAK033A December   2024  – June 2026 DAC121S101-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. Overview
  5. SEE Mechanisms
  6. Test Device and Test Board Information
  7. Irradiation Facility and Setup
  8. Single-Event Latch-Up Results
  9. Summary
  10. Single-Event Transient Results
  11. Confidence Interval Calculations
  12. References
  13. 10Revision History

References

  1. M. Shoga and D. Binder, "Theory of Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits", IEEE Trans. Nucl. Sci., Vol. 33(6), Dec. 1986, pp. 1714-1717.
  2. G. Bruguier and J. M. Palau, "Single particle-induced latchup", IEEE Trans. Nucl. Sci., Vol. 43(2), Mar. 1996, pp. 522-532.
  3. Cyclotron Institute, Texas A&M University, Texas A&M University Cyclotron Institute Radiation Effects Facility, webpage.
  4. James F. Ziegler, "The Stopping and Range of Ions in Matter" (SRIM) software simulation tool, webpage.
  5. D. Kececioglu, “Reliability and Life Testing Handbook”, Vol. 1, PTR Prentice Hall, New Jersey,1993, pp. 186-193.
  6. Vanderbilt University, ISDE CRÈME-MC, webpage.
  7. A. J. Tylka, J. H. Adams, P. R. Boberg, et al.,"CREME96: A Revision of the Cosmic Ray Effects on Micro-Electronics Code", IEEE Trans. on Nucl. Sci., Vol. 44(6), Dec. 1997, pp. 2150-2160.
  8. A. J. Tylka, W. F. Dietrich, and P. R. Boberg, "Probability distributions of high-energy solar-heavy-ion fluxes from IMP-8: 1973-1996", IEEE Trans. on Nucl. Sci.,Vol. 44(6), Dec. 1997, pp. 2140-2149.