SFFS060 March   2021 DRV8144-Q1

 

  1.   Trademarks
  2. 1Overview
  3. 2Functional Safety Failure In Time (FIT) Rates
  4. 3Failure Mode Distribution (FMD)
  5. 4Pin Failure Mode Analysis (Pin FMA)
    1. 4.1 SPI "S" variant in VQFN-HR package
    2. 4.2 HW variant in VQFN-HR package

SPI "S" variant in VQFN-HR package

Figure 4-2shows the pin diagram. For a detailed description of the device pins please refer to the Pin Configuration and Functions section in the DRV8144-Q1 data sheet.

GUID-20200902-CA0I-NC4Q-QPLX-VGZ2SPZKQWXX-low.gif Figure 4-2 SPI "S" variant
Table 4-2 Pin FMA for Device Pins Short-Circuited to Ground
Pin Description of Potential Failure Effect(s) Failure Effect Class
No. Name
1 nFAULT False fault signaling possible. Device will continue to operate as commanded. B
2 IPROPI IPROPI feedback is lost. ITRIP regulation, if enabled, is also lost. B
3 nSLEEP Device will be in SLEEP state and OUT is Hi-Z B
4 VM Device is powered off with driver Hi-Z. B
5, 6 OUT If OUT is commanded to be pulled high, short is detected and OUT is Hi-Z. B
7 GND Normal function. D
8,9 OUT If OUT is commanded to be pulled high, short is detected and OUT is Hi-Z. B
10 VCP Device damage possible. Device behavior can not be guaranteed. A
11 DRVOFF Pin based shutoff function is lost. B
12 IN External PWM control is lost. Internal ITRIP regulation is ok. No risk of spin direction reversal. B
13 nSCS SPI communication is lost. B
14 SCLK SPI communication is lost. B
15 SDI SPI communication is lost. B
16 SDO SPI communication is lost. B
Table 4-3 Pin FMA for Device Pins Open-Circuited
Pin Description of Potential Failure Effect(s) Failure Effect Class
No. Name
1 nFAULT False fault signaling possible. Device will continue to operate as commanded. B
2 IPROPI IPROPI feedback is lost. Load will be forced to recirculate if ITRIP regulation is enabled. B
3 nSLEEP Device will be in SLEEP state and OUT is Hi-Z. B
4 VM Device is powered off with driver Hi-Z. B
5, 6 OUT Load drive capability is lost. B
7 GND Normal function. D
8,9 OUT Load drive capability is lost. B
10 VCP The driver can't keep up with PWM frequency > 20 KHz B
11 DRVOFF Pin based shutoff is triggered and OUT is Hi-Z B
12 IN External PWM control is lost. Internal ITRIP regulation is OK. No risk of spin direction reversal. B
13 nSCS SPI communication is lost. B
14 SCLK SPI communication is lost. B
15 SDI SPI communication is lost. B
16 SDO SPI communication is lost. B
Table 4-4 Pin FMA for Device Pins Short-Circuited to Adjacent Pin
Short between pins Description of Potential Failure Effect(s) Failure Effect Class
nFAULT SDO False fault signaling possible. SPI communication will be affected during fault assertion. B
IPROPI nFAULT False fault signaling possible. IPROPI feedback is inaccurate. ITRIP regulation levels, if enabled, will be lower. B
nSLEEP IPROPI ITRIP regulation levels, if enabled, will be lower. B
VM nSLEEP SLEEP functionality is lost. B
OUT VM If OUT is commanded to be pulled low, short is detected and OUT is Hi-Z. B
GND OUT If OUT is commanded to be pulled high, short is detected and OUT is Hi-Z. B
VCP VM Pull up path RON (High-side FET) will be much higher. B
DRVOFF VCP Device damage possible. Device behavior can not be guaranteed. A
IN DRVOFF Either OUT is Hi-Z or external PWM control is lost. Internal ITRIP regulation is ok. No risk of spin direction reversal. B
nSCS IN SPI communication is affected. External PWM control is lost. Internal ITRIP regulation is OK. No risk of spin direction reversal. B
SCLK nSCS SPI communication is lost. B
SDI SCLK SPI communication is lost. B
SDO SDI SPI communication is lost. B
Table 4-5 Pin FMA for Device Pins Short-Circuited to VM
Pin Description of Potential Failure Effect(s) Failure Effect Class
No. Name
1 nFAULT Device damage possible. A
2 IPROPI Device damage possible. A
3 nSLEEP SLEEP functionality is lost. B
4 VM Device is powered off with driver Hi-Z. B
5, 6 OUT If OUT is commanded to be pulled low, short is detected and OUT is Hi-Z. B
7 GND Normal function. D
8,9 OUT If OUT is commanded to be pulled low, short is detected and OUT is Hi-Z. B
10 VCP Pull up path RON (High-side FET) will be much higher. B
11 DRVOFF OUT is Hi-Z. B
12 IN Device damage possible. A
13 nSCS Device damage possible. A
14 SCLK Device damage possible. A
15 SDI Device damage possible. A
16 SDO Device damage possible. A