SLUS828D December   2008  – October 2017 UCC28019A

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Soft-Start
      2. 7.3.2  System Protection
        1. 7.3.2.1  VCC Undervoltage Lockout (UVLO)
        2. 7.3.2.2  Input Brown-Out Protection (IBOP)
        3. 7.3.2.3  Output Overvoltage Protection (OVP)
        4. 7.3.2.4  Open Loop Protection/Standby (OLP/Standby)
        5. 7.3.2.5  ISENSE Open-Pin Protection (ISOP)
        6. 7.3.2.6  Output Undervoltage Detection (UVD) and Enhanced Dynamic Response (EDR)
        7. 7.3.2.7  Over-Current Protection
        8. 7.3.2.8  Soft Over Current (SOC)
        9. 7.3.2.9  Peak Current Limit (PCL)
        10. 7.3.2.10 Current Sense Resistor, RISENSE
      3. 7.3.3  Gate Driver
      4. 7.3.4  Current Loop
      5. 7.3.5  ISENSE and ICOMP Functions
      6. 7.3.6  Pulse Width Modulator
      7. 7.3.7  Control Logic
      8. 7.3.8  Voltage Loop
      9. 7.3.9  Output Sensing
      10. 7.3.10 Voltage Error Amplifier
      11. 7.3.11 Non-Linear Gain Generation
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Current Calculations
        2. 8.2.2.2  Bridge Rectifier
        3. 8.2.2.3  Input Capacitor
        4. 8.2.2.4  Boost Inductor
        5. 8.2.2.5  Boost Diode
        6. 8.2.2.6  Switching Element
        7. 8.2.2.7  Sense Resistor
        8. 8.2.2.8  Output Capacitor
        9. 8.2.2.9  Output Voltage Set Point
        10. 8.2.2.10 Loop Compensation
        11. 8.2.2.11 Brown Out Protection
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bias Supply
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Related Products
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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6 Specifications

6.1 Absolute Maximum Ratings(1)

Over operating free-air temperature range unless otherwise noted. Unless noted, all voltages are with respect to GND. Currents are positive into and negative out of the specified terminal.
MIN MAX UNIT
Input voltage range VCC, GATE –0.3 22 V
VINS, VSENSE, –0.3 7 V
VCOMP, ICOMP(2) –0.3 7.5 V
ISENSE –24 7 V
Input current range VSENSE, ISENSE –1 1 mA
Lead temperature, TSOL Soldering, 10s 300 °C
Junction temperature, TJ Operating –55 150 °C
Storage –65 150 °C
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those included under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods of time may affect device reliability.
(2) The VCOMP and ICOMP pin can go to 7.5 V ±6% due to internal drive circuitry. Absolute maximum rating is 7 V when an external bias is applied to the pin, with the source current limited below 50 µA.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC input voltage from a low-impedance source VCCOFF + 1 V 21 V
Operating junction temperature, TJ -40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) UCC28019A UNIT
P (PDIP) D (SOIC)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 52.8 113.0 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 42.3 61.5 °C/W
RθJB Junction-to-board thermal resistance 30.0 53.2 °C/W
ψJT Junction-to-top characterization parameter 19.5 15.9 °C/W
ψJB Junction-to-board characterization parameter 29.9 52.7 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

Unless otherwise noted, VCC=15 VDC, 0.1 μF from VCC to GND, -40°C ≤ TJ = TA ≤ 125°C. All voltages are with respect to GND. Currents are positive into and negative out of the specified terminal.
PARAMETER TEST CONDITION MIN TYP MAX UNIT
VCC Bias Supply
ICCPRESTART ICC pre-start current VCC = VCCON – 0.1 V 25 100 200 μA
ICCSTBY ICC standby current VSENSE = 0.5 V 1 2.2 2.9 mA
ICCON_load ICC operating current VSENSE = 4.5 V, CGATE = 4.7 nF 4 7.5 10 mA
Under Voltage Lockout (UVLO)
VCCON VCC turn on threshold 10 10.5 11 V
VCCOFF VCC turn off threshold 9 9.5 10 V
UVLO hysteresis 0.8 1 1.2 V
Oscillator
fSW Switching frequency TA = 25°C 61.7 65 68.3 kHz
-25°C ≤ TA ≤ 125°C 59 65 71 kHz
-40°C ≤ TA ≤ 125°C 57 71 kHz
PWM
DMIN Minimum duty cycle VCOMP = 0 V, VSENSE = 5 V,
ICOMP = 6.4 V		 0%
DMAX Maximum duty cycle VSENSE = 4.95 V 94% 98% 99.3%
tOFF(min) Minimum off time VSENSE = 3 V, ICOMP = 1 V 100 250 600 ns
System Protection
VSOC ISENSE threshold, Soft Over Current (SOC) -0.66 -0.73 -0.79 V
VPCL ISENSE threshold, Peak Current Limit (PCL) -1 -1.08 -1.15 V
IISOP ISENSE bias current, ISENSE Open-Pin Protection (ISOP) ISENSE = 0 V -2.1 -4.0 μA
VISOP ISENSE threshold, ISENSE Open-Pin Protection (ISOP) ISENSE = open pin 0.082 V
VOLP VSENSE threshold, Open Loop Protection (OLP) ICOMP = 1 V, ISENSE = -0.1 V,
VCOMP = 1 V		 0.77 0.82 0.86 V
Open Loop Protection (OLP) Internal pull-down current VSENSE = 0.5 V 100 250 nA
VUVD VSENSE threshold, output Under-Voltage Detection (UVD)(1) 4.63 4.75 4.87 V
VOVP VSENSE threshold, output Over-Voltage Protection (OVP) ISENSE = -0.1 V 5.12 5.25 5.38 V
VINSBROWNOUT_th Input Brown-Out Detection (IBOP)
high-to-low threshold 		0.76 0.82 0.88 V
VINSENABLE_th Input Brown-Out Detection (IBOP)
low-to-high threshold		 1.4 1.5 1.6 V
IVINS_0V VINS bias current VINS = 0 V 0 ±0.1 μA
ICOMP threshold, external overload protection 0.6 V
Current Loop
gmi Transconductance gain TA = 25°C 0.75 0.95 1.15 mS
Output linear range(1) ±50 μA
ICOMP voltage during OLP VSENSE = 0.5 V 3.7 4 4.3 V
Voltage Loop
VREF Reference voltage -40°C ≤ TA ≤ 125°C 4.9 5 5.1 V
gmv Transconductance gain without EDR -31.5 -42 -52.5 μS
gmv-EDR Transconductance gain under EDR VSENSE = 4.65 V -440 μS
Maximum sink current under normal operation VSENSE = 6 V, VCOMP = 4 V 21 30 38 μA
Source current under soft start VSENSE = 4 V, VCOMP = 2.5 V -21 -30 -38 μA
Maximum source current under EDR operation VSENSE = 4 V, VCOMP = 2.5 V -300 μA
VSENSE = 4 V, VCOMP = 4 V -170 μA
Enhanced dynamic response VSENSE low threshold, falling(1) 4.63 4.75 4.87 V
VSENSE input bias current VSENSE = 5 V 20 100 250 nA
VCOMP voltage during OLP VSENSE = 0.5 V, IVCOMP = 0.5 mA 0 0.2 0.4 V
VCOMP rapid discharge current VCOMP = 3 V, VCC = 0 V 0.77 mA
VPRECHARGE VCOMP precharge voltage IVCOMP = -100 μA, VSENSE = 5 V 1.76 V
IPRECHARGE VCOMP precharge current VCOMP = 1.0 V -1 mA
VSENSE threshold, end of soft start Initial start up 4.95 V
GATE Driver
GATE current, peak, sinking(1) CGATE = 4.7 nF 2 A
GATE current, peak, sourcing(1) CGATE = 4.7 nF -1.5 A
GATE rise time CGATE = 4.7 nF, GATE = 2 V to 8 V 8 40 60 ns
GATE fall time CGATE = 4.7 nF, GATE = 8 V to 2 V 8 25 40 ns
GATE low voltage, no load I GATE = 0 A 0 0.05 V
GATE low voltage, sinking I GATE = 20 mA 0.3 0.8 V
GATE low voltage, sourcing I GATE = -20 mA -0.3 -0.8 V
GATE low voltage, sinking, device OFF VCC = 5 V, IGATE = 5 mA 0.2 0.75 1.2 V
VCC = 5 V, IGATE = 20 mA 0.2 0.9 1.5 V
GATE high voltage VCC = 20 V, CGATE = 4.7 nF 11.0 12.5 14.0 V
VCC = 11 V, CGATE = 4.7 nF 9.5 10.5 11.0 V
VCC = VCCOFF + 0.2 V, CGATE = 4.7 nF 8.0 9.4 10.2 V
(1) Not production tested. Characterized by design.

6.6 Typical Characteristics

Unless otherwise noted, VCC = 15 VDC, 0.1 μF from VCC to GND, -40°C ≤ TJ = TA ≤ 125°C. All voltages are with respect to GND. Currents are positive into and negative out of the specified terminal.
UCC28019A wave1_lus828.gif Figure 1. UVLO Thrasholds vs Temperature
UCC28019A wave3_lus828.gif Figure 3. Supply Current vs Temperature
UCC28019A wave5_lus828.gif Figure 5. Oscillator Frequency vs Temperature
UCC28019A wave7_lus828.gif Figure 7. Current Averaging Amplifier Transconductance vs Temperature
UCC28019A wave9_lus828.gif Figure 9. Reference Voltage vs Temperature
UCC28019A wave11_lus828.gif Figure 11. VSENSE Threshold vs Temperature
UCC28019A wave13_lus828.gif Figure 13. VINS Threshold vs Temperature
UCC28019A wave15_lus828.gif Figure 15. Gate Drive Switching vs Temperature
UCC28019A wave17_lus828.gif Figure 17. Gate Low Voltage With Device Off vs Temperature
UCC28019A wave2_lus828.gif Figure 2. Supply Current vs Bias Supply Voltage
UCC28019A wave4_lus828.gif Figure 4. Supply Current vs Temperature
UCC28019A wave6_lus828.gif Figure 6. Oscillator Frequency vs Bias Supply Voltage
UCC28019A wave8_lus828.gif Figure 8. Voltage Error Amplifier Transconductance vs Temperature
UCC28019A wave10_lus828.gif Figure 10. ISENSE Threshold vs Temperature
UCC28019A wave12_lus828.gif Figure 12. VSENSE Threshold vs Temperature
UCC28019A wave14_lus828.gif Figure 14. Minimum Off Time vs Temperature
UCC28019A wave16_lus828.gif Figure 16. Gate Drive Switching vs Bias Supply Voltage