ZHCSTX9I September   2002  – November 2023 UCC27321 , UCC27322 , UCC37321 , UCC37322

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. 说明(续)
  6. Related Products
  7. Pin Configuration and Functions
  8. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Power Dissipation Ratings
    8. 7.8 Typical Characteristics
  9. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input Stage
      2. 8.3.2 Output Stage
      3. 8.3.3 Source and Sink Capabilities during Miller Plateau
      4. 8.3.4 Enable
    4. 8.4 Device Functional Modes
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input-to-Output Configuration
        2. 9.2.2.2 Input Threshold Type
        3. 9.2.2.3 VDD Bias Supply Voltage
        4. 9.2.2.4 Peak Source and Sink Currents
        5. 9.2.2.5 Enable and Disable Function
        6. 9.2.2.6 Propagation Delay
        7. 9.2.2.7 Power Dissipation
      3. 9.2.3 Application Curves
  11. 10Power Supply Recommendations
    1.     40
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 第三方产品免责声明
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 接收文档更新通知
    4. 12.4 支持资源
    5. 12.5 Trademarks
    6. 12.6 静电放电警告
    7. 12.7 术语表
  14. 13Revision History
  15. 14Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • D|8
  • P|8
  • DGN|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

Electrical Characteristics

VDD = 4.5 V to 15 V, TA = –40°C to +105°C for UCC2732x, TA = 0°C to 70°C for UCC3732x, TA = TJ, unless otherwise noted.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
INPUT (IN)
VIN_H, logic 1 input threshold1.62.22.5V
VIN_L, logic 0 input threshold0.81.21.5V
Input current0 V ≤ VIN ≤ VDD–10010µA
OUTPUT (OUT)
Peak output current(1)VDD = 14 V,9A
Output resistance high(2)IOUT = –10 mA0.61.5Ω
Output resistance low(2)IOUT = 10 mA0.41Ω
OVERALL
IDD, static operating currentUCC37321
UCC27321
IN = LOW, EN = LOW, VDD = 15 V150225µA
IN = HIGH, EN = LOW, VDD = 15 V440650
IN = LOW, EN = HIGH, VDD = 15 V370550
IN = HIGH, EN = HIGH, VDD = 15 V370550
UCC37322
UCC27322
IN = LOW, EN = LOW, VDD = 15 V150225
IN = HIGH, EN = LOW, VDD = 15 V450650
IN = LOW, EN = HIGH, VDD = 15 V75125
IN = HIGH, EN = HIGH, VDD = 15 V6751000
ENABLE (ENBL)
VEN_H, high-level enable voltageLOW to HIGH transition1.72.22.7V
VEN_L, low-level enable voltageHIGH to LOW transition1.11.62V
Hysteresis0.250.550.90
RENBL, enable impedanceVDD = 14 V, ENBL = GND75100135
Not tested in production.
Output pullup resistance here is a DC measurement that measures resistance of PMOS structure only, not N-channel structure.