ZHCSOH8E july   2021  – august 2023 TPS7H5001-SP , TPS7H5002-SP , TPS7H5003-SP , TPS7H5004-SP

PRODMIX  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Device Comparison Table
  7. 6 Device Options
  8. 7 Pin Configuration and Functions
  9. 8 Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Thermal Information
    5. 8.5  Electrical Characteristics: All Devices
    6. 8.6  Electrical Characteristics: TPS7H5001-SP
    7. 8.7  Electrical Characteristics: TPS7H5002-SP
    8. 8.8  Electrical Characteristics: TPS7H5003-SP
    9. 8.9  Electrical Characteristics: TPS7H5004-SP
    10. 8.10 Typical Characteristics
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  VIN and VLDO
      2. 9.3.2  Start-Up
      3. 9.3.3  Enable and Undervoltage Lockout (UVLO)
      4. 9.3.4  Voltage Reference
      5. 9.3.5  Error Amplifier
      6. 9.3.6  Output Voltage Programming
      7. 9.3.7  Soft Start (SS)
      8. 9.3.8  Switching Frequency and External Synchronization
        1. 9.3.8.1 Internal Oscillator Mode
        2. 9.3.8.2 External Synchronization Mode
        3. 9.3.8.3 Primary-Secondary Mode
      9. 9.3.9  Primary Switching Outputs (OUTA/OUTB)
      10. 9.3.10 Synchronous Rectifier Outputs (SRA and SRB)
      11. 9.3.11 Dead Time and Leading Edge Blank Time Programmability (PS, SP, and LEB)
      12. 9.3.12 Pulse Skipping
      13. 9.3.13 Duty Cycle Programmability
      14. 9.3.14 Current Sense and PWM Generation (CS_ILIM)
      15. 9.3.15 Hiccup Mode Operation (HICC)
      16. 9.3.16 External Fault Protection (FAULT)
      17. 9.3.17 Slope Compensation (RSC)
      18. 9.3.18 Frequency Compensation
      19. 9.3.19 Thermal Shutdown
    4. 9.4 Device Functional Modes
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1  Switching Frequency
        2. 10.2.2.2  Output Voltage Programming Resistors
        3. 10.2.2.3  Dead Time
        4. 10.2.2.4  Leading Edge Blank Time
        5. 10.2.2.5  Soft-Start Capacitor
        6. 10.2.2.6  Transformer
        7. 10.2.2.7  Main Switching FETs
        8. 10.2.2.8  Synchronous Rectificier FETs
        9. 10.2.2.9  RCD Clamp
        10. 10.2.2.10 Output Inductor
        11. 10.2.2.11 Output Capacitance and Filter
        12. 10.2.2.12 Sense Resistor
        13. 10.2.2.13 Hiccup Capacitor
        14. 10.2.2.14 Frequency Compensation Components
        15. 10.2.2.15 Slope Compensation Resistor
      3. 10.2.3 Application Curves
    3. 10.3 Power Supply Recommendations
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
      2. 10.4.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  13. 12Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • HFT|22
  • KGD|0
  • PW|24
散热焊盘机械数据 (封装 | 引脚)
订购信息

10.2.2.3 Dead Time

For GaN power semiconductor devices, a key characteristic that has to be taken into consideration is the voltage drop of the GaN FET while it is operating in reverse conduction mode. While the GaN FET does not have a body diode that is inherent in the silicon FET, it does still have the ability to conduct current in the reverse direction with behavior that is similar to a diode. When conducting in the reverse direction, the source-drain voltage of the GaN FET can be quite large. Thus, to reduce the dead-time losses and maximize efficiency, the dead time was set to a value of approximately 25 ns. Based on the selected value, Equation 8 can be used to calculate the resistors needed to attain the desired dead time.

Equation 31. GUID-20210617-CA0I-BC9V-GRH1-XCFRKJDGJTMC-low.svg

The standard resistor value of 20.5 kΩ was selected for both RPS and RSP.