ZHCSD94C January   2015  – January 2015 TPS62134A , TPS62134B , TPS62134C , TPS62134D

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 典型应用电路
  5. 5 修订历史记录
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommend Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Enable and Shutdown (EN)
      2. 9.3.2 Undervoltage Lockout (UVLO)
      3. 9.3.3 Soft-Start (SS) Circuitry
      4. 9.3.4 Switch Current-Limit and Short Circuit Protection
      5. 9.3.5 Output Voltage and LPM Logic Selection (VIDx and LPM)
      6. 9.3.6 Power-Good Output (PG)
      7. 9.3.7 Single-Ended Remote Sense (FBS)
      8. 9.3.8 Thermal Shutdown
    4. 9.4 Device Functional Modes
      1. 9.4.1 PWM Operation and Power Save Mode
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Output Filter Selection
        2. 10.2.2.2 Inductor Selection
        3. 10.2.2.3 Output Capacitor
        4. 10.2.2.4 Input Capacitor
        5. 10.2.2.5 Soft-Start Capacitor
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 Thermal Considerations
  13. 13器件和文档支持
    1. 13.1 器件支持
      1. 13.1.1 第三方产品免责声明
    2. 13.2 文档支持
      1. 13.2.1 相关文档　
    3. 13.3 相关链接
    4. 13.4 商标
    5. 13.5 静电放电警告
    6. 13.6 术语表
  14. 14机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8 Specifications

8.1 Absolute Maximum Ratings(1)

over operating junction temperature range (unless otherwise noted)
MIN MAX UNIT
Voltage at pins(2) AVIN, PVIN –0.3 20 V
EN, SW –0.3 VI + 0.3
SS, PG, VOS, VID0, VID1, LPM –0.3 7
FBS –0.3 3
Sink current PG 0 2 mA
Operating junction temperature, TJ –40 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground pin.

8.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS–001 (1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

8.3 Recommend Operating Conditions

over operating junction temperature range, unless otherwise noted.
MIN MAX UNIT
VI Input voltage (AVIN, PVIN) 3 17 V
V(PG) PG pin pullup resistor voltage 0 6 V
IO Output current 3 V ≤ VI < 5 V 0 3 A
5 V ≤ VI ≤ 17 V 0 3.2
TJ Operating junction temperature –40 125 °C

8.4 Thermal Information

THERMAL METRIC(1) TPS62134x
RGT Package		 UNIT
RθJA Junction-to-ambient thermal resistance 44.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 51.0
RθJB Junction-to-board thermal resistance 16.6
ψJT Junction-to-top characterization parameter 0.9
ψJB Junction-to-board characterization parameter 16.6
RθJC(bot) Junction-to-case (bottom) thermal resistance 3.7
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953

Electrical Characteristic

TJ = –40 °C to 125 °C and VI = 3 V to 17 V. Typical values at VI = 12 V and TJ = 25 °C, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
VI Input voltage range 3 17 V
IQ Operating quiescent current EN = High, no load, device not switching
TJ = –40 °C to 85 °C		 20 35 µA
TJ = 125 °C 58
ISD Shutdown current into AVIN and PVIN EN = Low
TJ = –40 °C to +85 °C		 2 9 µA
TJ = 125 °C 18
V(UVLO) Undervoltage lockout threshold VI falling 2.6 2.7 2.8 V
VI rising 2.8 2.9 3
TSD(th) Thermal shutdown threshold TJ rising 160 °C
TSD(hys) Thermal shutdown hysteresis TJ falling 20
CONTROL (EN, SS, PG, VIDx, LPM)
VIH High-level input threshold voltage (EN, VIDx, LPM) 0.8 0.54 V
VIL Low-level input threshold voltage (EN, VIDx, LPM) 0.47 0.3 V
R(PD) Pull down resistor at EN, VIDx, LPM EN, VIDx, LPM = low 400 kΩ
R(DIS) Output discharge resistor EN = Low, VO = 1 V 20 kΩ
Ilkg Input leakage current at EN, VIDx, LPM EN, VIDx, LPM = 3.3 V 0.01 1 µA
VTH(PG) Power good threshold DC voltage VO rising 736 760 784 mV
VO falling 696 720 752
VOL(PG) Power good output low voltage I(PG) = –2 mA 0.07 0.3 V
Ilkg(PG) Input leakage current at PG V(PG) = 1.8 V 1 400 nA
td(PG) Power good delay time PG rising 140 µs
PG falling 20
I(SS) SS pin source current 2.3 2.5 2.7 µA
POWER SWITCH
rDS(on_H) High-side MOSFET on-resistance VI ≥ 6 V 90 170 mΩ
rDS(on_L) Low-side MOSFET on-resistance VI ≥ 6 V 40 70
IL High-side MOSFET DC current-limit VI ≥ 5 V, TJ = 25 °C 3.6 4.4 5.4 A
IL(LOW) High-side MOSFET DC current-limit at low output voltage VO ≤ 0.3 V 1.6
OUTPUT
Ilkg(FBS) Input leakage current at FBS V(FBS)= 1.1 V 1 100 nA
VO(A) Output voltage accuracy PWM mode –1% 1%
PSM mode, LPM = High(1) –1% 3%
ΔVO(ΔIO) Load regulation(2) VI = 7.2 V, IO = 0.5 A to 3.2 A 0.01 %/A
ΔVO(ΔVI) Line regulation(2) 3 V ≤ VI ≤ 17 V, IO = 1 A 0.003 %/V
(1) This is the accuracy provided by the device itself (line and load regulation effects are not included). External components effective value: L = 1 µH and C(OUT) = 47 µF.
(2) Line and load regulation depend on external component selection and layout.

8.5 Typical Characteristics

D005_SLVSC20.gif
Figure 1. Quiescent Current into PVIN and AVIN
D006_SLVSC20.gif
Figure 2. Shutdown Current into PVIN and AVIN