ZHCSJY3D DECEMBER   2003  – June 2019 TPS54110

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     Device Images
  4. 修订历史记录
  5. Device Information
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Recommended Operating Conditions
    3. 7.3 Thermal Information
    4. 7.4 Electrical Characteristics
    5. 7.5 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 VBIAS Regulator (VBIAS)
      2. 8.3.2 Voltage Reference
      3. 8.3.3 Oscillator and PWM Ramp
      4. 8.3.4 Error Amplifier
      5. 8.3.5 PWM Control
      6. 8.3.6 Dead-Time Control and MOSFET Drivers
      7. 8.3.7 Overcurrent Protection
      8. 8.3.8 Thermal Shutdown
      9. 8.3.9 Power Good (PWRDG)
    4. 8.4 Undervoltage Lockout (UVLO)
    5. 8.5 Slow-Start/Enable (SS/ENA)
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Typical TPS54110 Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Switching Frequency
          2. 9.2.1.2.2 Input Capacitors
          3. 9.2.1.2.3 Output Filter Components
            1. 9.2.1.2.3.1 Inductor Selection
            2. 9.2.1.2.3.2 Capacitor Selection
          4. 9.2.1.2.4 Compensation Components
          5. 9.2.1.2.5 Bias and Bootstrap Capacitors
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Very-Small Form-Factor Application
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
      3. 9.2.3 Two-Output Sequenced-Startup Application
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
        3. 9.2.3.3 Application Curve
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Layout Considerations For Thermal Performance
    4. 10.4 Grounding and Powerpad Layout
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 第三方产品免责声明
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • PWP|20
散热焊盘机械数据 (封装 | 引脚)
订购信息

Electrostatic Discharge Caution

esds-image

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.