ZHCSQC2A November   2015  – July 2022 TPS51216-EP

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 说明（续）
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 VDDQ Switch Mode Power Supply Control
      2. 8.3.2 VREF and REFIN, VDDQ Output Voltage
      3. 8.3.3 Soft-Start and Powergood
      4. 8.3.4 Power State Control
      5. 8.3.5 Discharge Control
      6. 8.3.6 VTT Overcurrent Protection
      7. 8.3.7 V5IN Undervoltage Lockout (UVLO) Protection
      8. 8.3.8 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 MODE Pin Configuration
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 D-CAP Mode
      2. 9.1.2 Light-Load Operation
      3. 9.1.3 VTT and VTTREF
      4. 9.1.4 VDDQ Overvoltage and Undervoltage Protection
      5. 9.1.5 VDDQ Overcurrent Protection
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 List of Materials
        2. 9.2.2.2 External Components Selection
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 接收文档更新通知
    2. 12.2 支持资源
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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6 Pin Configuration and Functions

GUID-F55F466E-C6F0-4E08-8904-D9B81B2E403F-low.gif Figure 6-1 RUK Package 20-Pin WQFNTop View
Table 6-1 Pin Functions
PIN I/O DESCRIPTION
NAME NO.
DRVH 14 O High-side MOSFET gate driver output.
DRVL 11 O Low-side MOSFET gate driver output.
GND 7 — Signal ground.
MODE 19 I Connect resistor to GND to configure switching frequency and discharge mode. (See Table 8-2.)
PGND 10 — Gate driver power ground. RDS(on) current sensing input (+).
PGOOD 20 O Powergood signal open drain output. PGOOD goes high when VDDQ output voltage is within the target range.
REFIN 8 I Reference input for VDDQ. Connect to the midpoint of a resistor divider from VREF to GND. Add a capacitor for stable operation.
SW 13 I/O High-side MOSFET gate driver return. RDS(on) current sensing input (–).
S3 17 I S3 signal input. (See Table 8-1.)
S5 16 I S5 signal input. (See Table 8-1.)
TRIP 18 I Connect resistor to GND to set OCL at VTRIP / 8. Output 10-μA current at room temperature, TC = 4700 ppm/°C.
VBST 15 I High-side MOSFET gate driver bootstrap voltage input. Connect a capacitor from the VBST pin to the SW pin.
VDDQSNS 9 I VDDQ output voltage feedback. Reference input for VTTREF. Also serves as power supply for VTTREF.
VLDOIN 2 I Power supply input for VTT LDO. Connect VDDQ in typical application.
VREF 6 O 1.8-V reference output.
VTT 3 O VTT 2-A LDO output. Need to connect 10 μF or larger capacitance for stability.
VTTGND 4 — Power ground for VTT LDO.
VTTREF 5 O Buffered VTT reference output. Need to connect 0.22 μF or larger capacitance for stability.
VTTSNS 1 I VTT output voltage feedback.
V5IN 12 I 5-V power supply input for internal circuits and MOSFET gate drivers.
Thermal pad — — Connect to GND