ZHCS610D December   2011  – December 2021 TPS28225-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Undervoltage Lockout (UVLO)
      2. 7.3.2 Output Active Low
      3. 7.3.3 Enable/Power Good
      4. 7.3.4 3-State Input
      5. 7.3.5 Bootstrap Diode
      6. 7.3.6 Upper and Lower Gate Drivers
      7. 7.3.7 Dead-Time Control
      8. 7.3.8 Thermal Shutdown
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Switching the MOSFETs
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 第三方产品免责声明
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 术语表
  12. 12Mechanical, Packaging, and Orderable Information

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6.2 ESD Ratings

VALUEUNIT
V(ESD)Electrostatic dischargeHuman-body model (HBM), per AEC Q100-002(1)±2000V
Charged-device model (CDM), per AEC Q100-011±750
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.