ZHCS610D December   2011  – December 2021 TPS28225-Q1

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Undervoltage Lockout (UVLO)
      2. 7.3.2 Output Active Low
      3. 7.3.3 Enable/Power Good
      4. 7.3.4 3-State Input
      5. 7.3.5 Bootstrap Diode
      6. 7.3.6 Upper and Lower Gate Drivers
      7. 7.3.7 Dead-Time Control
      8. 7.3.8 Thermal Shutdown
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Switching the MOSFETs
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 第三方产品免责声明
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 术语表
  12. 12Mechanical, Packaging, and Orderable Information

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订购信息

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MINMAXUNIT
Input supply voltageVDD–0.38.8V
Boot voltageVBOOT–0.333V
Phase voltageVPHASE, DC–232 or VBOOT + 0.3 – VDD whichever is lessV
VPHASE, pulse < 400 ns, E = 20 μJ–733.1 or VBOOT + 0.3 – VDD whichever is lessV
Input voltageVPWM, VEN/PG–0.313.2V
Output voltageVUGATE, (VBOOT – VPHASE < 8.8)VPHASE – 0.3VBOOT + 0.3V
VUGATE, Pulse < 100 ns, E = 2 μJ, (VBOOT – VPHASE < 8.8)VPHASE – 2VBOOT + 0.3V
VLGATE–0.3VDD + 0.3V
VLGATE, Pulse < 100 ns, E = 2 μJ–2VDD + 0.3V
TJOperating virtual junction temperature–40150°C
TstgStorage temperature–65150°C
Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
All voltages are with respect to GND unless otherwise noted. Currents are positive into, negative out of the specified terminal. Consult Packaging Section of the Data book for thermal limitations and considerations of packages.