ZHCSMM0 December   2020 TPS27SA08-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Summary Table
  6. 6 Pin Configuration and Functions
    1. 6.1 Recommended Connections for Unused Pins
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 SNS Timing Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Protection Mechanisms
        1. 9.3.1.1 Thermal Shutdown
        2. 9.3.1.2 Current Limit
          1. 9.3.1.2.1 Current Limit Foldback
          2. 9.3.1.2.2 Undervoltage Lockout (UVLO)
          3. 9.3.1.2.3 VBB during Short-to-Ground
        3. 9.3.1.3 Energy Limit
        4. 9.3.1.4 Voltage Transients
          1. 9.3.1.4.1 Driving Inductive and Capacitive Loads
        5. 9.3.1.5 Reverse supply
        6. 9.3.1.6 Fault Event – Timing Diagrams
      2. 9.3.2 Diagnostic Mechanisms
        1. 9.3.2.1 VOUT Short-to-supply and Open-Load
          1. 9.3.2.1.1 Detection With Switch Enabled
          2. 9.3.2.1.2 Detection With Switch Disabled
        2. 9.3.2.2 SNS Output
          1. 9.3.2.2.1 RSNS Value
            1. 9.3.2.2.1.1 High Accuracy Load Current Sense
            2. 9.3.2.2.1.2 SNS Output Filter
        3. 9.3.2.3 ST Pin
        4. 9.3.2.4 Fault Indication and SNS Mux
        5. 9.3.2.5 Resistor Sharing
        6. 9.3.2.6 High-Frequency, Low Duty-Cycle Current Sensing
    4. 9.4 Device Functional Modes
      1. 9.4.1 Off
      2. 9.4.2 Standby
      3. 9.4.3 Diagnostic
      4. 9.4.4 Standby Delay
      5. 9.4.5 Active
      6. 9.4.6 Fault
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Ground Protection Network
      2. 10.1.2 Interface With Microcontroller
      3. 10.1.3 I/O Protection
      4. 10.1.4 Inverse Current
      5. 10.1.5 Loss of GND
      6. 10.1.6 Thermal Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Thermal Considerations
        2. 10.2.2.2 Diagnostics
          1. 10.2.2.2.1 Selecting the RISNS Value
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Related Documentation
    2. 13.2 Trademarks
    3. 13.3 Electrostatic Discharge Caution
    4. 13.4 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

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订购信息

7.5 Electrical Characteristics

VBB = 8 V to 36 V, TJ = –40°C to 125°C (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
INPUT VOLTAGE AND CURRENT
VClampVDS clamp voltage4058V
VUVLOFVBB undervoltage lockout falling2.53V
VUVLORVBB undervoltage lockout rising2.53V
ISBStandby current (includes MOSFET leakage)VBB = 24 V, TJ = 25°C
VEN = VDIA_EN = 0 V, VOUT = 0 V		0.8µA
VBB = 24 V, TJ = 85°C
VEN = VDIA_EN = 0 V, VOUT = 0 V		1µA
VBB = 24 V, TJ = 125°C,
VEN = VDIA_EN = 0 V, VOUT = 0 V		6µA
IOUT_OFFOutput leakage currentVBB = 24 V, TJ = 25°C
VEN = VDIA_EN = 0 V, VOUT = 0 V		0.010.5µA
VBB = 24 V, TJ = 125°C
VEN = VDIA_EN = 0 V, VOUT = 0 V		6µA
IDIACurrent consumption in diagnostic modeVBB = 24 V, ISNS = 0 mA
VEN = 0 V, VDIA_EN = 5 V, VOUT = 0 V		36mA
IQQuiescent currentVBB = 24 V
VEN = 5 V VDIA_EN = 0 V, IOUT = 0 A, VSELX = 0 V		2.45.2mA
tSTBYStandby mode delay timeVEN = VDIA_EN = 0 V to Standby20ms
RON CHARACTERISTICS
RONOn-resistance
Includes MOSFET and package		TJ = 25°C, 6 V ≤ VBB ≤ 36 V9mΩ
TJ = 150°C, 6 V ≤ VBB ≤ 36 V20mΩ
TJ = 25°C, 3 V ≤ VBB ≤ 6 V15mΩ
RON(REV)On-resistance during reverse polarityTJ = 25°C, -18 V ≤ VBB ≤ –8 V9mΩ
TJ = 105°C, –18 V ≤ VBB ≤ –8 V20mΩ
CURRENT SENSE CHARACTERISTICS
KSNSCurrent sense ratio
IOUT / ISNS		4600
ISNSICurrent sense current and current sense accuracyVEN = VDIA_EN = 5 V, VSEL1 = VSEL2 = 0 VIOUT = 8 A1.74mA
ISNSICurrent sense current and current sense accuracyVEN = VDIA_EN = 5 V, VSEL1 = VSEL2 = 0 VIOUT = 8 A–55%
ISNSICurrent sense current and current sense accuracyVEN = VDIA_EN = 5 V, VSEL1 = VSEL2 = 0 VIOUT = 3 A0.65mA
ISNSICurrent sense current and current sense accuracyVEN = VDIA_EN = 5 V, VSEL1 = VSEL2 = 0 VIOUT = 3 A–55%
ISNSICurrent sense current and current sense accuracyVEN = VDIA_EN = 5 V, VSEL1 = VSEL2 = 0 VIOUT = 780 mA0.217mA
ISNSICurrent sense current and current sense accuracyVEN = VDIA_EN = 5 V, VSEL1 = VSEL2 = 0 VIOUT = 780 mA–55%
ISNSICurrent sense current and current sense accuracyVEN = VDIA_EN = 5 V, VSEL1 = VSEL2 = 0 VIOUT = 300 mA0.065mA
ISNSICurrent sense current and current sense accuracyVEN = VDIA_EN = 5 V, VSEL1 = VSEL2 = 0 VIOUT = 300 mA–1212%
ISNSICurrent sense current and current sense accuracyVEN = VDIA_EN = 5 V, VSEL1 = VSEL2 = 0 VIOUT = 100 mA0.022mA
ISNSICurrent sense current and current sense accuracyVEN = VDIA_EN = 5 V, VSEL1 = VSEL2 = 0 VIOUT = 100 mA–4242%
TJ SENSE CHARACTERISTICS
ISNSTTemperature sense currentVDIA_EN = 5 V, VSEL1 = 5 V, VSEL2 = 0 VTJ = –40°C0.12mA
TJ = 25°C0.85mA
TJ = 85°C1.52mA
TJ = 150°C2.25mA
dISNST/dTCoefficient0.0112mA/°C
VBB SENSE CHARACTERISTICS
ISNSVVoltage sense currentVDIA_EN = 5 V, VSEL1 = 5 V, VSEL2 = 5 VVBB = 3 V0.26mA
VBB = 8 V0.69mA
VBB = 13.5 V1.17mA
VBB = 18 V1.56mA
VBB = 28 V2.43mA
dISNSV/dVCoefficient0.0867mA/V
SNS CHARACTERISTICS
ISNSFHISNS fault high levelVDIA_EN = 5 V, VSEL1 = 0 V, VSEL2 = 066.97.6mA
ISNSleakISNS leakageVDIA_EN = 0 V01µA
VSNSclampVSNS clamp5.9V
ICLCurrent threshold at which current limit loop engagesTJ = –40°C1722.227.8A
ICLCurrent threshold at which current limit loop engagesTJ = 25°C152025A
ICL_REGCurrent limit regulation levelTJ = 25°C24A
ICLCurrent threshold at which current limit loop engagesTJ = 125°C12.81620A
CURRENT LIMIT CHARACTERISTICS
FAULT CHARACTERISTICS
VOLOpen-load detection voltageVEN = 0 V, VDIA_EN = 5 V22.54V
tOL1OL and STB indication time - switch disabledFrom falling edge of EN
VEN= 5 V to 0 V, VDIA_EN = 5 V, VSELx = 00
IOUT = 0 mA, VOUT = 4 V		300500700µs
tOL2OL and STB indication time - switch disabledFrom rising edge of DIA_EN
VEN = 0 V, VDIA_EN = 0 V to 5 V, VSELx = 00
IOUT = 0 mA, VOUT = 4 V		50µs
tOL3OL and STB indication time - switch disabledFrom rising edge of VOUT
VEN = 0 V, VDIA_EN = 5 V, VSELx = 00
IOUT = 0 mA, VOUT = 0 V to 4 V		50µs
TABSThermal shutdown160°C
THYSThermal shutdown hysteresis20°C
tRETRYRetry timeMinimum time from fault shutdown to switch re-enable (for thermal shutdown, current limit, and energy limit)123ms
EN PIN CHARACTERISTICS(1)
VIL, EN Input voltage low level0.8V
VIH, ENInput voltage high levelNo GND network Diode2V
VIHYS, ENInput voltage hysteresisNo GND network Diode250mV
IIL, EN Input current low levelVEN = 0.8 V0.8µA
IIH, ENInput current high levelVEN = 2.0 V2µA
REN Internal pulldown resistor1MΩ
DIA_EN PIN CHARACTERISTICS (1)
VIL, DIA_ENInput voltage low levelNo GND network Diode0.8V
VIH, DIA_ENInput voltage high levelNo GND network Diode2V
VIHYS, DIA_ENInput voltage hysteresis250mV
IIL, DIA_EN Input current low levelVDIA_EN = 0.8 V0.8µA
IIH, DIA_ENInput current high levelVDIA_EN = 2.0 V2µA
RDIA_ENInternal pulldown resistor1MΩ
SEL1 AND SEL2 PIN CHARACTERISTICS (1)
VIL, SELx Input voltage low levelNo GND network Diode0.8V
VIH, SELxInput voltage high level2V
VIHYS, SELxInput voltage hysteresis250mV
IIL, SELx Input current low levelVSELx = 0.8 V0.8µA
IIH, SELxInput current high levelVSELx = 2.0 V2µA
RSELxInternal pulldown resistor1MΩ
LATCH PIN CHARACTERISTICS (1)
VIL, LATCH Input voltage low levelNo GND network Diode0.8V
VIH, LATCH Input voltage high levelNo GND network Diode2V
VIHYS, LATCH Input voltage hysteresis250mV
IIL, LATCH Input current low levelVLATCH = 0.8 V0.8µA
IIH, LATCH Input current high levelVLATCH = 2.0 V2µA
RLATCH Internal pulldown resistor1MΩ
ST PIN CHARACTERISTICS (1)
VOL, STOutput voltage low levelIST = 1 mA0.4V
ISTleak Leakage currentVST = 5 V2µA
(1) VBB = 3 to 28 V