ZHCSL91B October   2020  – March 2022 TPS25947

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
      1.      15
    8. 7.8 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Input Reverse Polarity Protection
      2. 8.3.2  Undervoltage Lockout (UVLO and UVP)
      3. 8.3.3  Overvoltage Lockout (OVLO)
      4. 8.3.4  Overvoltage Clamp (OVC)
      5. 8.3.5  Inrush Current, Overcurrent, and Short Circuit Protection
        1. 8.3.5.1 Slew Rate (dVdt) and Inrush Current Control
        2. 8.3.5.2 Circuit-Breaker
        3. 8.3.5.3 Active Current Limiting
        4. 8.3.5.4 Short-Circuit Protection
      6. 8.3.6  Analog Load Current Monitor
      7. 8.3.7  Reverse Current Protection
      8. 8.3.8  Overtemperature Protection (OTP)
      9. 8.3.9  Fault Response and Indication (FLT)
      10. 8.3.10 Auxiliary Channel Control (AUXOFF)
      11. 8.3.11 Power Good Indication (PG)
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Single Device, Self-Controlled
    3. 9.3 Typical Application
      1. 9.3.1 Design Requirements
      2. 9.3.2 Detailed Design Procedure
        1. 9.3.2.1 Device Selection
        2. 9.3.2.2 Setting Undervoltage and Overvoltage Thresholds
        3. 9.3.2.3 Setting Output Voltage Rise Time (tR)
        4. 9.3.2.4 Setting Power Good Assertion Threshold
        5. 9.3.2.5 Setting Overcurrent Threshold (ILIM)
        6. 9.3.2.6 Setting Overcurrent Blanking Interval (tITIMER)
      3. 9.3.3 Application Curves
    4. 9.4 Active ORing
    5. 9.5 Priority Power MUXing
    6. 9.6 USB PD Port Protection
    7. 9.7 Parallel Operation
  10. 10Power Supply Recommendations
    1. 10.1 Transient Protection
    2. 10.2 Output Short-Circuit Measurements
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
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订购信息

Setting Power Good Assertion Threshold

The Power Good assertion threshold can be set using the resistors R4 and R5 connected to the PGTH pin whose values can be calculated as:

Equation 16.
Because R4 and R5 leak the current from the output rail VOUT, these resistors must be selected to minimize the leakage current. The current drawn by R4 and R5 from the power supply is IR45 = VOUT / (R4 + R5). However, leakage currents due to external active components connected to the resistor string can add error to these calculations. So, the resistor string current, IR123 must be chosen to be 20 times greater than the PGTH leakage current expected. From the device electrical specifications, PGTH leakage current is 1 μA (maximum), VPGTH(R) = 1.2 V and from design requirements, VPG = 11.4 V. To solve the equation, first choose the value of R4 = 47 kΩ and calculate R5 = 5.52 kΩ. Choose nearest 1% standard resistor value as R5 = 5.6 kΩ.