ZHCSHY9 April   2018 TPS22810-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     简化原理图
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical DC Characteristics
    8. 6.8 Typical AC Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 On and Off Control
      2. 8.3.2 Quick Output Discharge (QOD)
        1. 8.3.2.1 QOD when System Power is Removed
        2. 8.3.2.2 Internal QOD Considerations
      3. 8.3.3 EN/UVLO
      4. 8.3.4 Adjustable Rise Time (CT)
      5. 8.3.5 Thermal Shutdown
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 ON and OFF Control
      2. 9.1.2 Input Capacitor (Optional)
      3. 9.1.3 Output Capacitor (Optional)
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Shutdown Sequencing During Unexpected Power Loss
        2. 9.2.2.2 VIN to VOUT Voltage Drop
        3. 9.2.2.3 Inrush Current
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  12. 12器件和文档支持
    1. 12.1 器件支持
      1. 12.1.1 开发支持
    2. 12.2 文档支持
      1. 12.2.1 相关文档
    3. 12.3 接收文档更新通知
    4. 12.4 社区资源
    5. 12.5 商标
    6. 12.6 静电放电警告
    7. 12.7 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

9.2.2.3 Inrush Current

To determine how much inrush current is caused by the CL capacitor, use Equation 9.

Equation 9. TPS22810-Q1 Q3_Iinhush_slvsco0.gif

where

  • IINRUSH is the amount of inrush caused by CL
  • CL is the capacitance on VOUT
  • dt is the Output Voltage rise time during the ramp up of VOUT when the device is enabled
  • dVOUT is the change in VOUT during the ramp up of VOUT when the device is enabled

The appropriate rise time can be calculated using the design requirements and the inrush current equation. When we calculate the rise time (measured from 10% to 90% of VOUT), we account for this in our dVOUT parameter (80% of VOUT = 9.6 V) shown in Equation 10 and Equation 11.

Equation 10. 400 mA = 22 µF × 9.6 V/dt
Equation 11. dt = 528 µs

To ensure an inrush current of less than 400 mA, choose a CT value that yields a rise time of more than 528 μs. Consulting Table 2 at VIN = 12 V, CT = 4700 pF provides a typical rise time of 957 μs. Using this rise time and voltage into Equation 9, yields Equation 12 and Equation 13.

Equation 12. IInrush = 22 µF × 9.6 V/ 957 µs
Equation 13. Inrush = 220 mA

An appropriate CL value must be placed on VOUT such that the IMAX and IPLS specifications of the device are not violated.