ZHCSAT4D December   2012  – April 2017 TPD4E1U06

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
  4. 修订历史记录
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 ESD Ratings—IEC Specification
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 IEC 61000-4-2 Level 4 ESD Protection
      2. 7.3.2 IEC 61000-4-5 Surge Protection
      3. 7.3.3 IEC 61000-4-4 EFT Protection
      4. 7.3.4 IO Capacitance
      5. 7.3.5 DC Breakdown Voltage
      6. 7.3.6 Ultra Low Leakage Current
      7. 7.3.7 Low ESD Clamping Voltage
      8. 7.3.8 Industrial Temperature Range
      9. 7.3.9 Small, Easy-to-Route Packages
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Signal Range on Pins 1, 3, 4, or 6
        2. 8.2.2.2 Operating Frequency
      3. 8.2.3 Application Curve
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Detailed Description

Overview

The TPD4E1U06 is a quad channel unidirectional TVS ESD protection diode with ultra low capacitance. This device can dissipate ESD strikes above the maximum level specified by the IEC 61000-4-2 international standard. Typical application areas include HDMI, USB2.0, MHL, and DisplayPort. Its 0.8-pF line capacitance makes it suitable for a wide range of applications.

Functional Block Diagram

TPD4E1U06 cir_sch_LVSBQ9.gif Figure 9. Circuit Schematic Diagram

Feature Description

IEC 61000-4-2 Level 4 ESD Protection

The I/O pins can withstand ESD events up to ±15-kV contact and air. An ESD/surge clamp diverts the current to ground.

IEC 61000-4-5 Surge Protection

The IO pins can withstand surge events up to 3 A and 45 W (8/20-μs waveform). An ESD-surge clamp diverts this current to ground.

IEC 61000-4-4 EFT Protection

The IO pins can withstand an electrical fast transient burst of up to 80 A (5/50-ns waveform, 4 kV with 50-Ω impedance). An ESD-surge clamp diverts the current to ground.

IO Capacitance

The capacitance between each I/O pin to ground is 0.8 pF.

DC Breakdown Voltage

The DC breakdown voltage of each I/O pin is a minimum of 6.5 V. This ensures that sensitive equipment is protected from surges above the reverse standoff voltage of 5.5 V.

Ultra Low Leakage Current

The I/O pins feature an ultra-low leakage current of 10 nA (Maximum) with a bias of 2.5 V.

Low ESD Clamping Voltage

The I/O pins feature an ESD clamp that is capable of clamping the voltage to 11 V (IPP = 1 A).

Industrial Temperature Range

This device features an industrial operating range of –40°C to +125°C.

Small, Easy-to-Route Packages

The layout of this device makes it simple to add protection to the design. Industry standard packages allow for easy additions to the board and easy layout.

Device Functional Modes

The TPD4E1U06 is a passive integrated circuit that triggers when voltages are above VBR or below the forward diode drop. During ESD events, voltages as high as ±15 kV can be directed to ground via the internal diode network. Once the voltages on the protected line fall below the trigger levels of TPD4E1U06 (usually within 10s of nano-seconds) the device reverts to passive.