ZHCSJ87A December   2018  – July 2022 TMUX6121 , TMUX6122 , TMUX6123

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Thermal Information
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Electrical Characteristics (Dual Supplies: ±15 V)
    6. 6.6 Switching Characteristics (Dual Supplies: ±15 V)
    7. 6.7 Electrical Characteristics (Single Supply: 12 V)
    8. 6.8 Switching Characteristics (Single Supply: 12 V)
    9.     Typical Characteristics
  7. Parameter Measurement Information
    1. 7.1 Truth Tables
  8. Detailed Description
    1. 8.1 Overview
      1. 8.1.1  On-Resistance
      2. 8.1.2  Off-Leakage Current
      3. 8.1.3  On-Leakage Current
      4. 8.1.4  Turn-On and Turn-Off Time
      5. 8.1.5  Break-Before-Make Delay
      6. 8.1.6  Charge Injection
      7. 8.1.7  Off Isolation
      8. 8.1.8  Channel-to-Channel Crosstalk
      9. 8.1.9  Bandwidth
      10. 8.1.10 THD + Noise
      11. 8.1.11 AC Power Supply Rejection Ratio (AC PSRR)
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Ultralow Leakage Current
      2. 8.3.2 Ultralow Charge Injection
      3. 8.3.3 Bidirectional and Rail-to-Rail Operation
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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Ultralow Charge Injection

The TMUX6121 is implemented with simple transmission gate topology, as shown in Figure 8-13. Any mismatch in the stray capacitance associated with the NMOS and PMOS causes an output level change whenever the switch is opened or closed.

GUID-0040BE35-F6FB-448D-80DC-8147652BDD3F-low.gifFigure 8-13 Transmission Gate Topology

The devices utilize special charge-injection cancellation circuitry that reduces the source (Sx)-to-drain (Dx) charge injection to as low as 0.51 pC at VS = 0 V, as shown in Figure 8-14.

GUID-83967955-C04E-4C3D-925D-3227EE55393B-low.gifFigure 8-14 Source-to-Drain Charge Injection vs Source or Drain Voltage