ZHCSJ87A December   2018  – July 2022 TMUX6121 , TMUX6122 , TMUX6123

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Thermal Information
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Electrical Characteristics (Dual Supplies: ±15 V)
    6. 6.6 Switching Characteristics (Dual Supplies: ±15 V)
    7. 6.7 Electrical Characteristics (Single Supply: 12 V)
    8. 6.8 Switching Characteristics (Single Supply: 12 V)
    9.     Typical Characteristics
  7. Parameter Measurement Information
    1. 7.1 Truth Tables
  8. Detailed Description
    1. 8.1 Overview
      1. 8.1.1  On-Resistance
      2. 8.1.2  Off-Leakage Current
      3. 8.1.3  On-Leakage Current
      4. 8.1.4  Turn-On and Turn-Off Time
      5. 8.1.5  Break-Before-Make Delay
      6. 8.1.6  Charge Injection
      7. 8.1.7  Off Isolation
      8. 8.1.8  Channel-to-Channel Crosstalk
      9. 8.1.9  Bandwidth
      10. 8.1.10 THD + Noise
      11. 8.1.11 AC Power Supply Rejection Ratio (AC PSRR)
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Ultralow Leakage Current
      2. 8.3.2 Ultralow Charge Injection
      3. 8.3.3 Bidirectional and Rail-to-Rail Operation
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Charge Injection

The TMUX6121, TMUX6122, and TMUX6123 have a simple transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QINJ. Figure 8-6 shows the setup used to measure charge injection.

GUID-E0B5799F-250F-45E3-ADBB-32CC41C264D0-low.gifFigure 8-6 Charge-Injection Measurement Setup