ZHCSEH6E December   2002  – August 2020 THS7530

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: Main Amplifier
    6. 6.6 Package Thermal Data
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Test Circuits
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Continually-Variable Gain Control
      2. 8.3.2 Common-Mode Voltage Control
      3. 8.3.3 Output Voltage Clamps
      4. 8.3.4 Power-Down Mode
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Examples
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 第三方产品免责声明
      2. 12.1.2 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 静电放电警告
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

8.3.4 Power-Down Mode

To minimize power consumption when idle, the THS7530 device has an active-low power-down control that reduces the quiescent current from 40 mA to 350 µA. The turnon delay is only 820 ns.

When in power-down mode, the THS7530 device has a 80-dB forward isolation to allow other devices to drive the same signal path with minimal interference from the idle THS7530 device.