ZHCSLJ9E October   1998  – July 2020 SN74LVCH32373A

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     6
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Operating Characteristics
    9. 6.9 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Standard CMOS Inputs
      2. 7.3.2 Balanced High-Drive CMOS Push-Pull Outputs
      3. 7.3.3 Partial Power Down (Ioff)
      4. 7.3.4 Over-voltage Tolerant Inputs
      5. 7.3.5 Clamp Diode Structure
      6. 7.3.6 Bus-Hold Data Inputs
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
        1. 8.2.1.1 Power Considerations
        2. 8.2.1.2 Input Considerations
        3. 8.2.1.3 Output Considerations
        4. 8.2.1.4 Timing Considerations
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Support Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
  • NMJ|96
散热焊盘机械数据 (封装 | 引脚)
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7.3.3 Partial Power Down (Ioff)

The inputs and outputs for this device enter a high-impedance state when the device is powered down, inhibiting current backflow into the device. The maximum leakage into or out of any input or output pin on the device is specified by Ioff in the Electrical Characteristics.