SCES198N April   1999  – December 2015 SN74LVC2G08

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Specifications
    1. 3.1 Absolute Maximum Ratings
    2. 3.2 ESD Ratings
    3. 3.3 Thermal Information
    4. 3.4 Electrical Characteristics
    5. 3.5 Typical Characteristics
  4. 4Detailed Description
    1. 4.1 Overview
    2. 4.2 Functional Block Diagram
    3. 4.3 Feature Description
      1. 4.3.1 Down Voltage Translation
    4. 4.4 Device Functional Modes
  5. 5Application and Implementation
    1. 5.1 Application Information
    2. 5.2 Typical Application
      1. 5.2.1 Design Requirements
      2. 5.2.2 Detailed Design Procedure
      3. 5.2.3 Application Curves
  6. 6Power Supply Recommendations
  7. 7Layout
    1. 7.1 Layout Guidelines
    2. 7.2 Layout Example
  8. 8Device and Documentation Support
    1. 8.1 Community Resources
    2. 8.2 Trademarks
    3. 8.3 Electrostatic Discharge Caution
    4. 8.4 Glossary
  9. 9Mechanical, Packaging, and Orderable Information

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3 Specifications

3.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage –0.5 6.5 V
VI Input voltage(2) –0.5 6.5 V
VO Voltage applied to any output in the high-impedance or power-off state(2) –0.5 6.5 V
VO Voltage applied to any output in the high or low state(2)(3) –0.5 VCC + 0.5 V
IIK Input clamp current VI < 0 –50 mA
IOK Output clamp current VO < 0 –50 mA
IO Continuous output current ±50 mA
Continuous current through VCC or GND ±100 mA
Tj Junction temperature 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The input negative-voltage and output voltage ratings may be exceeded if the input and output current ratings are observed.
(3) The value of VCC is provided in the Recommended Operating Conditions table.

3.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

Recommended Operating Conditions(1)

MIN MAX UNIT
VCC Supply voltage Operating 1.65 5.5 V
Data retention only 1.5
VIH High-level input voltage VCC = 1.65 V to 1.95 V 0.65 × VCC V
VCC = 2.3 V to 2.7 V 1.7
VCC = 3 V to 3.6 V 2
VCC = 4.5 V to 5.5 V 0.7 × VCC
VIL Low-level input voltage VCC = 1.65 V to 1.95 V 0.35 × VCC V
VCC = 2.3 V to 2.7 V 0.7
VCC = 3 V to 3.6 V 0.8
VCC = 4.5 V to 5.5 V 0.3 × VCC
VI Input voltage 0 5.5 V
VO Output voltage 0 VCC V
IOH High-level output current VCC = 1.65 V –4 mA
VCC = 2.3 V –8
VCC = 3 V –16
–24
VCC = 4.5 V –32
IOL Low-level output current VCC = 1.65 V 4 mA
VCC = 2.3 V 8
VCC = 3 V 16
24
VCC = 4.5 V 32
Δt/Δv Input transition rise or fall rate VCC = 1.8 V ± 0.15 V, 2.5 V ± 0.2 V 20 ns/V
VCC = 3.3 V ± 0.3 V 10
VCC = 5 V ± 0.5 V 5
TA Operating free-air temperature SN74LVC2G08DCU –40 125 °C
SN74LVC2G08DCT –40 125
SN74LVC2G08YZP –40 85
(1) All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, literature number SCBA004.

3.3 Thermal Information

THERMAL METRIC(1) SN74LVC2G08 UNIT
DCT (SM8) DCU (VSSOP) YZP (DSBGA)
8 PINS 8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 220 227 128 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 108 84 14 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

3.4 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP(1) MAX UNIT
VOH IOH = –100 µA 1.65 V to 5.5 V VCC  – 0.1 V
IOH = –4 mA 1.65 V 1.2
IOH = –8 mA 2.3 V 1.9
IOH = –16 mA 3 V 2.4
IOH = –24 mA 2.3
IOH = –32 mA 4.5 V 3.8
VOL IOL = 100 µA 1.65 V to 5.5 V 0.1 V
IOL = 4 mA 1.65 V 0.45
IOL = 8 mA 2.3 V 0.3
IOL = 16 mA 3 V 0.4
IOL = 24 mA 0.55
IOL = 32 mA 4.5 V 0.55
II A or B inputs VI = 5.5 V or GND 0 to 5.5 V ±5 µA
Ioff VI or VO = 5.5 V 0 ±10 µA
ICC VI = 5.5 V or GND, IO = 0 1.65 V to 5.5 V 10 µA
ΔICC One input at VCC  – 0.6 V,
Other inputs at VCC or GND,
TA = –40°C to 85°C		 3 V to 5.5 V 500 µA
Ci VI = VCC or GND, TA = –40°C to 85°C 3.3 V 5 pF
Cpd f = 10 MHz, TA = –40°C to 85°C 1.8 V to 3.3V 17
5 V 20
(1) All typical values are at VCC = 3.3 V, TA = 25°C.

Switching Characteristics

PARAMETER FROM
(INPUT)		 TO
(OUTPUT)		 TA VCC MIN MAX UNIT
tpd A or B Y –40°C to 85°C VCC = 1.8 V ± 0.15 V 2.6 9 ns
VCC = 2.5 V ± 0.2 V 1 5.1
VCC = 3.3 V ± 0.3 V 1 4.7
VCC = 5 V ± 0.5 V 1 3.8
–40°C to 125°C VCC = 1.8 V ± 0.15 V 2.6 9.8
VCC = 2.5 V ± 0.2 V 1 5.8
VCC = 3.3 V ± 0.3 V 1 5.3
VCC = 5 V ± 0.5 V 1 4.8

3.5 Typical Characteristics

SN74LVC2G08 D001_SCES217.gif Figure 1. tPD Across Temperature at 3.3-V VCC
SN74LVC2G08 D002_SCES217.gif Figure 2. tPD Across VCC at 25°C