SLOS073G March   1976  – November 2014 RC4558

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Operating Characteristics
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Unity-Gain Bandwidth
      2. 7.3.2 Common-Mode Rejection Ratio
      3. 7.3.3 Slew Rate
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Typical Application
      1. 8.1.1 Design Requirements
      2. 8.1.2 Detailed Design Procedure
        1. 8.1.2.1 Amplifier Selection
        2. 8.1.2.2 Passive Component Selection
      3. 8.1.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • D|8
  • P|8
  • PS|8
  • DGK|8
  • PW|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

11 Device and Documentation Support

11.0.1 Trademarks

All trademarks are the property of their respective owners.

11.0.2 Electrostatic Discharge Caution

esds-image

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

11.1 Glossary

SLYZ022TI Glossary.

This glossary lists and explains terms, acronyms and definitions.