ZHCSNI6 march   2023 OPA928

ADVANCE INFORMATION  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4.     Thermal Information
    5. 6.4 Electrical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Guard Buffer
      2. 7.3.2 Thermal Protection
      3. 7.3.3 Capacitive Load and Stability
      4. 7.3.4 EMI Rejection
      5. 7.3.5 Common-Mode Voltage Range
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Contamination Considerations
      2. 8.1.2 Guarding Considerations
      3. 8.1.3 Humidity Considerations
      4. 8.1.4 Dielectric Relaxation
    2. 8.2 Typical Applications
      1. 8.2.1 High-Impedance (Hi-Z) Amplifier
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Transimpedance Amplifier
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
    3. 8.3 Power-Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
  9. Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
        1. 9.1.1.1 PSpice® for TI
        2. 9.1.1.2 TINA-TI™ 仿真软件(免费下载)
        3. 9.1.1.3 TI 参考设计
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 接收文档更新通知
    4. 9.4 支持资源
    5. 9.5 Trademarks
    6. 9.6 静电放电警告
    7. 9.7 术语表
  10. 10Mechanical, Packaging, and Orderable Information

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Detailed Design Procedure

Some photodiode applications operate in dark conditions and require low-light detection. In these cases, the current output from the photodiode can be miniscule. To make the small diode current measurable, a transimpedance amplifier (TIA) with a very large gain is required. The ideal transfer function of a resistive transimpedance amplifier is given by Equation 1:

Equation 1. V O U T = I P D   × R F

The photodiode current (IPD) flows through the feedback resistor (RF) and forces an output voltage (VOUT) equal to the voltage drop across RF. The ideal transfer function gives an intuitive understanding of TIA operation. In practice, however, nonidealities must be taken into consideration to achieve desirable performance. Figure 8-6 illustrates important nonidealities of the transimpedance amplifier circuit.

GUID-20230113-SS0I-XLLV-6BXB-BP2CN91S39HR-low.svg Figure 8-6 Transimpedance Photodiode Application

One very important consideration, is the input bias current of the op amp. The input bias current directly adds to IPD and creates an undesired error. The input bias current typically determines the minimum measurable IPD within a given error tolerance. For example, a 1‑pA input bias current yields a 20% error when measuring a 5‑pA photodiode current. A 1% error target requires a 50-fA input bias current maximum specification. The ultra-low input bias current of the OPA928 enables accurate, extremely low IPD measurements. For information on how to maintain the specified input bias performance, see Section 8.4.

The input offset voltage (VOS) of the op amp is another significant source of error. The input offset voltage forces a voltage across the effective shunt resistance of the diode (RD) and creates an error current (IRPD) equal to VOS / RPD. In many cases, VOS can be a major source of error. For example, a VOS of 25 μV and an RPD of 1 GΩ creates an IRPD of 25 fA. Take into consideration offset voltage variation with temperature and common-mode voltage.

In low-light applications, a very large RF is needed to provide the required gain, giving rise to potential stability problems. RF interacts with the input capacitance (CIN) of the op amp, the photodiode capacitance (CPD), and stray PCB capacitance to create a low-frequency zero in the noise gain transfer function (1/β). Remember that CIN includes the differential (CDF) and common-mode (CCM) capacitance of the op amp. The value of CDF and CCM are found in the Electrical Characteristics. The zero in 1/β causes the gain to increase over frequency and is the basis for instability problems. To counteract the zero, create a pole by adding a compensation capacitor (CF) in the feedback loop. The optimal value selection of CF depends on several parameters and extensive literature exists on this topic. One approach is to equate two expressions of noise gain. Equation 2 makes the assumption that the noise gain only depends on the capacitance of the circuit at a high enough frequency; a reasonable approximation.

Equation 2. G B W 2 π R F C F = C I N + C F C F

Solving Equation 2 for CF yields a quadratic equation with one real solution. The quadratic equation is given by Equation 3:

Equation 3. C F = 1 ± 1 + 8 π G B W R F C I 4 π G B W R F

Equation 3 yields more than 45° of phase margin and some amount of gain peaking. Increasing the value of CF yields a higher phase margin and limits the peaking response at the expense of signal bandwidth, given by Equation 4. For a flat frequency response, use a compensation capacitor calculator. For a very large RF, a very small capacitor (< 0.5 pA) is required to maintain stability, and stray capacitance in the feedback loop can be sufficient.

Equation 4. f - 3 d B = 1 2 π R F C F

Another issue arises when using a very large RF. All resistors are sources of thermal noise. The magnitude of noise density contribution from a resistor is directly correlated to the square root of the resistance value. In a gain configuration, the feedback resistance and input resistance contribute to the total noise of the circuit. The thermal noise resistance value in Figure 8-6 is given by the parallel combination of RF and RPD. Equation 5 shows the input-referred-resistor noise-density equation. The low voltage noise of the OPA928 is not a significant contributor of noise because RF and RPD are typically very large.

Equation 5. e n _ R = 4 k T R P D R F ( R P D + R F )

In this application, a 5-V output is required from the 500-pA current input from a Si photodiode. A 10-GΩ resistor is used to achieve the required gain of 10,000,000,000 V/A. RPD and CPD of the photodiode is assumed to be 5 GΩ and 35 pF, respectively. Using the specifications of the OPA928 and the aforementioned photodiode specifications, Equation 3 calculates CF to be approximately 0.017 pF. The value obtained by calculation is impractical; therefore, the smallest standard capacitor available is used (1 pF). If settling time is a major concern, consider making the required small-value capacitor using PCB traces.