ZHCSII6D July 2018 – May 2025 OPA855
PRODUCTION DATA
封装选项
请参考 PDF 数据表获取器件具体的封装图。
机械数据 (封装 | 引脚)
- Y|0
- DSG|8
散热焊盘机械数据 (封装 | 引脚)
- DSG|8
订购信息
6.6 典型特性
测试条件：TA = 25°C、VS+ = 2.5V、VS– = –2.5V、VIN+ = 0V、RF = 453Ω、增益 = 7V/V、RL = 200Ω，并且输入和输出以 1/2Vs 为基准（除非另有说明）
| VOUT = 100 mVPP |
| VOUT = 2 VPP |
| 微小信号响应 |
| VOUT = 2 VPP |
| VOUT = 2 VPP |
| 平均上升和下降时间 (10%–90%) = 300ps， | ||
| 上升和下降时间受测试设备限制 |
| 微小信号响应 |
| 3 个典型芯片 |
| 3 个典型芯片 |
| 3 个典型芯片，VS+ = 5V、VS– = 0V |
| 3 个典型芯片，VS+ = 5V、VS– = 0V |
| 3 个典型芯片 |
| VS+ = 5V，VS– = 0V |
| 已测试 13780 个芯片、µ = 17.6mA、σ = 0.3mA |
| 已测试 13780 个芯片、µ = –11.2µA、σ = 0.6µA |
| VOUT = 100 mVPP |
| 增益 = 39.2V/V、RF = 953Ω、VOUT = 100mVPP |
| VOUT = 2 VPP |
| 微小信号响应 |
| 频率 = 10MHz |
| VOUT = 2 VPP |
| VOUT = 2 VPP |
| 平均上升和下降时间 (10%–90%) = 569ps | ||
| 2 × 输出过驱 |
| 微小信号响应 |
| 已测试 28 个芯片、µ = 0.4µV/°C、σ = 0.7µV/°C |
| VS+ = 5V，VS– = 0V |
| VS+ = 5V，VS– = 0V |
| VS+ = 5V，VS– = 0V |
| VS+ = 5V，VS– = 0V |
| 已测试 13780 个芯片、µ = –0.2mV、σ = 0.15mV |
| 已测试 13780 个芯片、µ = 0.04µA、σ = 0.1µA |