ZHCS509E November   2011  – June 2018 OPA180 , OPA2180 , OPA4180

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
    1.     低噪声 （峰值到峰值噪声 = 250nV）
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
    2.     Pin Functions: OPA180
    3.     Pin Functions: OPA2180
    4.     Pin Functions: OPA4180
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information: OPA180
    5. 7.5 Thermal Information: OPA2180
    6. 7.6 Thermal Information: OPA4180
    7. 7.7 Electrical Characteristics: VS = ±2 V to ±18 V (VS = 4 V to 36 V)
    8. 7.8 Typical Characteristics: Table of Graphs
    9. 7.9 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Operating Characteristics
      2. 8.3.2 EMI Rejection
      3. 8.3.3 Phase-Reversal Protection
      4. 8.3.4 Capacitive Load and Stability
      5. 8.3.5 Electrical Overstress
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Bipolar ±10-V Analog Output from a Unipolar Voltage Output DAC
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Component Selection
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Discrete INA + Attenuation
      3. 9.2.3 RTD Amplifier
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 相关链接
    2. 12.2 商标
    3. 12.3 静电放电警告
    4. 12.4 术语表
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.5 Thermal Information: OPA2180

THERMAL METRIC(1) OPA2180 UNIT
D (SOIC) DGK (MSOP)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 111 159.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 54.9 37.4 °C/W
RθJB Junction-to-board thermal resistance 51.7 48.5 °C/W
ψJT Junction-to-top characterization parameter 9.3 1.2 °C/W
ψJB Junction-to-board characterization parameter 51.1 77.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.