ZHCSR58E April   2005  – October 2022 MAX3243E

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. 说明(续)
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  ESD Ratings - IEC Specifications
    4. 7.4  Recommended Operating Conditions
    5. 7.5  Thermal Information
    6. 7.6  Electrical Characteristics
    7. 7.7  Driver Electrical Characteristics
    8. 7.8  Receiver, Electrical Characteristics
    9. 7.9  Auto-Powerdown Electrical Characteristics
    10. 7.10 Driver Switching Characteristics
    11. 7.11 Receiver Switching Characteristics
    12. 7.12 Auto-Powerdown Switching Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 ESD Protection
          1. 10.2.2.1.1 ESD Test Conditions
          2. 10.2.2.1.2 Human Body Model (HBM)
          3. 10.2.2.1.3 IEC61000-4-2 (Formerly Known as IEC1000-4-2)
          4. 10.2.2.1.4 Machine Model
    3. 10.3 Power Supply Recommendations
    4. 10.4 Layout
      1. 10.4.1 Layout Example
        1.       Device and Documentation Support
          1. 11.1 Receiving Notification of Documentation Updates
          2. 11.2 支持资源
          3. 11.3 Trademarks
          4. 11.4 Electrostatic Discharge Caution
          5. 11.5 术语表
  11. 11Mechanical, Packaging, and Orderable Information

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Driver Electrical Characteristics

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)(1) (see Figure 10-1)
PARAMETERTEST CONDITIONSMINTYP(2)MAXUNIT
VOHHigh-level output voltageAll DOUT at RL = 3 kΩ to GND55.4V
VOLLow-level output voltageAll DOUT at RL = 3 kΩ to GND–5–5.4V
VOOutput voltage
(mouse driveability)
DIN1 = DIN2 = GND, DIN3 = VCC, 3-kΩ to GND at DOUT3,
DOUT1 = DOUT2 = 2.5 mA
±5V
IIHHigh-level input currentVI = VCC±0.01±1μA
IILLow-level input currentVI at GND±0.01±1μA
VhysInput hysteresis±1V
IOSShort-circuit output current(3)VCC = 3.6 V,VO = 0 V±60mA
VCC = 5.5 V,VO = 0 V
roOutput resistanceVCC, V+, and V– = 0 V,VO = ±2 V30010M
IoffOutput leakage currentFORCEOFF = GND,VO = ±12 V,VCC = 0 to 5.5 V±25μA
Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.
All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
Short-circuit durations should be controlled to prevent exceeding the device absolute power dissipation ratings, and not more than one output should be shorted at a time.