ZHCSU09I
July 2004 – February 2025
LP2981
,
LP2981A
PRODUCTION DATA
1
1
特性
2
应用
3
说明
4
Pin Configuration and Functions
5
Specifications
5.1
Absolute Maximum Ratings
5.2
ESD Ratings
5.3
Recommended Operating Conditions
5.4
Thermal Information
5.5
Electrical Characteristics
5.6
Typical Characteristics
6
Detailed Description
6.1
Overview
6.2
Functional Block Diagrams
6.3
Feature Description
6.3.1
Output Enable
6.3.2
Dropout Voltage
6.3.3
Current Limit
6.3.3.1
Current Limit (Legacy Chip)
6.3.3.2
Current Limit (New Chip)
6.3.4
Undervoltage Lockout (UVLO)
6.3.5
Thermal Shutdown
6.3.6
Output Pulldown
6.4
Device Functional Modes
6.4.1
Normal Operation
6.4.2
Dropout Operation
6.4.3
Disabled
7
Application and Implementation
7.1
Application Information
7.1.1
Recommended Capacitor Types
7.1.1.1
Recommended Capacitors (Legacy Chip)
7.1.1.1.1
Tantalum Capacitors
7.1.1.1.2
Ceramic Capacitors
7.1.1.1.3
Aluminum Capacitors
7.1.1.2
Recommended Capacitors (New Chip)
7.1.2
Input and Output Capacitor Requirements
7.1.2.1
Input Capacitor
7.1.2.2
Output Capacitor
7.1.2.2.1
Output Capacitor (Legacy Chip)
7.1.2.2.2
Output Capacitor (New Chip)
7.1.3
Estimating Junction Temperature
7.1.4
Power Dissipation (PD)
7.1.5
Reverse Current
7.2
Typical Application
7.2.1
Design Requirements
7.2.2
Detailed Design Procedure
7.2.2.1
ON and OFF Input Operation
7.2.3
Application Curves
7.3
Power Supply Recommendations
7.4
Layout
7.4.1
Layout Guidelines
7.4.2
Layout Example
8
Device and Documentation Support
8.1
Device Nomenclature
8.2
Documentation Support
8.2.1
Related Documentation
8.3
Receiving Notification of Documentation Updates
8.4
支持资源
8.5
Trademarks
8.6
静电放电警告
8.7
术语表
9
Revision History
10
Mechanical, Packaging, and Orderable Information
封装选项
机械数据 (封装 | 引脚)
DBV|5
MPDS018T
散热焊盘机械数据 (封装 | 引脚)
订购信息
zhcsu09i_oa
zhcsu09i_pm
1
特性
输入电压 (V
IN
) 范围:
旧芯片:2.2V 至 16V
新芯片:2.5V 至 16V
输出电压 (V
OUT
) 范围:1.2V 至 5.0V
输出电压 (V
OUT
) 精度:
A 级旧芯片为 ±0.75%
标准级旧芯片为 ±1.25%
新芯片 ±0.5%(A 级和标准级)
负载和温度范围内的输出电压 (V
OUT
) 精度: ±1%(新芯片)
输出电流:高达 100mA
低 I
Q
(新芯片):I
LOAD
= 0mA 时为 69μA
低 I
Q
(新芯片):I
LOAD
= 100mA 时为 620μA
关断电流与温度间的关系:
< 1μA(旧芯片)
≤ 1.75μA(新芯片)
输出电流限制和热保护
与 2.2µF 陶瓷电容器搭配使用时可保持稳定(新芯片)
高 PSRR(新芯片):
1kHz 频率下为 75dB,1MHz 频率下为 45dB
工作结温:-40°C 至 +125°C
封装:5 引脚 SOT-23 (DBV)