ZHCSS23A april   2023  – august 2023 LMH32401-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 绝对最大额定值
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: Gain = 2 kΩ
    6. 6.6 Electrical Characteristics: Gain = 20 kΩ
    7. 6.7 Electrical Characteristics: Both Gains
    8. 6.8 Electrical Characteristics: Logic Threshold and Switching Characteristics
    9. 6.9 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Switched Gain Transimpedance Amplifier
      2. 7.3.2 Clamping and Input Protection
      3. 7.3.3 ESD Protection
      4. 7.3.4 Differential Output Stage
    4. 7.4 Device Functional Modes
      1. 7.4.1 Ambient Light Cancellation (ALC) Mode
      2. 7.4.2 Power-Down Mode (Multiplexer Mode)
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 接收文档更新通知
    4. 9.4 支持资源
    5. 9.5 Trademarks
    6. 9.6 静电放电警告
    7. 9.7 术语表
  11. 10Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.5 Electrical Characteristics: Gain = 2 kΩ

at VDD = 3.3 V, VOCM = open, VOD = 0 V, CPD (1) = 1 pF, EN = 0 V, VGAIN = 0 V, IDC_EN = 3.3 V, RL = 100 Ω, and TA = 25℃ (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
AC PERFORMANCE
SSBW Small-signal bandwidth VOUT = 100 mVPP 450 MHz
LSBW Large-signal bandwidth VOUT = 1 VPP 450 MHz
tR, tF Rise and fall time VOUT = 100 mVPP, pulse duration = 10 ns 0.8 ns
Slew rate(2) VOUT = 1 VPP, pulse duration = 10 ns 1100 V/µs
Overload pulse extension(3) IIN = 10 mA, pulse duration = 10 ns 4 ns
iN Integrated input current noise f = 500 MHz 250 nARMS
DC PERFORMANCE
Z21 Small-signal transimpedance gain(4) 1.75 2 2.25 kΩ
VOD Differential output offset voltage
(VOUT– – VOUT+)		 –12 3.5 12 mV
ΔVOD/ΔTA Differential output offset voltage drift ±5.5 µV/°C
INPUT PERFORMANCE
RIN Input resistance 60 100 120 Ω
VIN Default input bias voltage Input pin floating 2.42 2.47 2.52 V
ΔVIN/ΔTA Default input bias voltage drift Input pin floating 1.1 mV/°C
IIN_LIN
 DC input current range Z21 < 3-dB degradation from IIN = 50 µA 600 705 µA
(1) Input capacitance of photodiode.
(2) Average of rising and falling slew rate.
(3) Pulse duration extension measured at 50% of pulse height of a square wave.
(4) Gain measured at the amplifier output pins when driving a 100-Ω resistive load. At higher resistor loads, the gain increases.