ZHCSO71A June   2021  – December 2021 LM74701-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input Voltage
      2. 8.3.2 Charge Pump
      3. 8.3.3 Gate Driver
      4. 8.3.4 Enable
      5. 8.3.5 Battery Voltage Monitoring (SW)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown Mode
      2. 8.4.2 Conduction Mode
        1. 8.4.2.1 Regulated Conduction Mode
        2. 8.4.2.2 Full Conduction Mode
        3. 8.4.2.3 VDS Clamp Mode
      3. 8.4.3 Reverse Current Protection Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Design Considerations
        2. 9.2.2.2 MOSFET Selection
        3. 9.2.2.3 Charge Pump VCAP (CVCAP) and Input Capacitance (CIN)
        4. 9.2.2.4 Output Capacitance (COUT)
      3. 9.2.3 Application Curves
    3. 9.3 What to Do and What Not to Do
    4. 9.4 OR-ing Application Configuration
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 接收文档更新通知
    2. 12.2 支持资源
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 术语表
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DDF|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.3.3 Gate Driver

The gate driver is used to control the external N-Channel MOSFET by setting the GATE to ANODE voltage to the corresponding mode of operation. There are four defined modes of operation that the gate driver operates under forward regulation, full conduction mode, reverse current protection and VDS clamp mode according to the ANODE to CATHODE voltage. These modes of operation are described in more detail in the Regulated Conduction Mode, Full Conduction Mode, Reverse Current Protection Mode and VDS Clamp Mode sections. Figure 8-2 depicts how the modes of operation vary according to the ANODE to CATHODE voltage of the LM74701-Q1. The threshold between forward regulation mode and conduction mode is when the ANODE to CATHODE voltage is 50 mV. The threshold between forward regulation mode and reverse current protection mode is when the ANODE to CATHODE voltage is –11 mV. The threshold between reverse current protection mode and VDS clamp mode is when the ANODE to CATHODE voltage is –39-V typical.

GUID-20211118-SS0I-C6FM-CRSP-MLWFCBTQTMD7-low.gifFigure 8-2 Gate Driver Mode Transitions

Before the gate driver is enabled following three conditions must be achieved:

  • The EN pin voltage must be greater than the specified input high voltage.
  • The VCAP to ANODE voltage must be greater than the undervoltage lockout voltage.
  • The ANODE voltage must be greater than VANODE POR Rising threshold.
If the above conditions are not achieved, then the GATE pin is internally connected to the ANODE pin, assuring that the external MOSFET is disabled. After these conditions are achieved, the gate driver operates in the correct mode depending on the ANODE to CATHODE voltage.