ZHCSJC9G September   2006  – Jaunuary 2020 LM5069

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      典型应用图
  4. 4 修订历史记录
    1.     Device Comparison
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Current Limit
      2. 7.3.2 Circuit Breaker
      3. 7.3.3 Power Limit
      4. 7.3.4 Undervoltage Lockout (UVLO)
      5. 7.3.5 Overvoltage Lockout (OVLO)
      6. 7.3.6 Power Good Pin
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power Up Sequence
      2. 7.4.2 Gate Control
      3. 7.4.3 Fault Timer and Restart
      4. 7.4.4 Shutdown Control
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 48-V, 10-A Hot Swap Design
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Select RSNS and CL setting
          2. 8.2.1.2.2 Selecting the Hot Swap FET(s)
          3. 8.2.1.2.3 Select Power Limit
          4. 8.2.1.2.4 Set Fault Timer
          5. 8.2.1.2.5 Check MOSFET SOA
          6. 8.2.1.2.6 Set Undervoltage and Overvoltage Threshold
            1. 8.2.1.2.6.1 Option A
            2. 8.2.1.2.6.2 Option B
            3. 8.2.1.2.6.3 Option C
            4. 8.2.1.2.6.4 Option D
          7. 8.2.1.2.7 Input and Output Protection
          8. 8.2.1.2.8 Final Schematic and Component Values
        3. 8.2.1.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 PC Board Guidelines
      2. 10.1.2 System Considerations
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 开发支持
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
VIN to GND(3) –0.3 100 V
SENSE, OUT, and PGD to GND –0.3 100 V
GATE to GND(3) –0.3 100 V
OUT to GND (1 -ms transient) (4) –1 100 V
UVLO to GND –0.3 100 V
OVLO to GND –0.3 7 V
VIN to SENSE –0.3 0.3 V
Maximum junction temperature, TJMAX 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications.
(3) The GATE pin voltage is typically 12 V above VIN when the LM5069 is enabled. Therefore, the Absolute Maximum Ratings for VIN
(100 V) applies only when the LM5069 is disabled, or for a momentary surge to that voltage because the Absolute Maximum Rating for the GATE pin is also 100 V.
(4) Select external MOSFET with VGS(th) voltage higher than VOUT during -ve transient. This avoids MOSFET getting turned-ON during -ve transient.