ZHCSC12D November   2013  – October 2019 DRV8850

PRODUCTION DATA.  

  1. 特性
  2. 应用范围
  3. 说明
    1.     Device Images
      1.      简化原理图
  4. 修订历史记录
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Supervisor
      2. 7.3.2 Bridge Control
      3. 7.3.3 Current Sensing – VPROPI
      4. 7.3.4 Slew-Rate Control
      5. 7.3.5 Dead Time
      6. 7.3.6 Propagation Delay
      7. 7.3.7 Power Supplies and Input Pins
      8. 7.3.8 LDO Voltage Regulator
      9. 7.3.9 Protection Circuits
        1. 7.3.9.1 Overcurrent Protection (OCP)
        2. 7.3.9.2 Thermal Shutdown (TSD)
        3. 7.3.9.3 Undervoltage Lockout (UVLO)
        4. 7.3.9.4 Overvoltage Lockout (OVLO)
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Motor Voltage
        2. 8.2.2.2 Drive Current
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
      1. 10.3.1 Power Dissipation
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Device Functional Modes

The DRV8850 internal logic and charge pump are operating unless nSLEEP is pulled low. The LDO regulator can be active independent of the nSLEEP pin. This independence allows a microcontroller or other device to be powered by the LDO regulator while retaining the ability to put the DRV8850 into sleep mode.

If LDOEN and nSLEEP are both brought logic low the device will minimize current consumption in sleep mode. While the LDO regulator remains active n sleep mode, a quiescent current (typically 50 µA plus current through the external feedback resistors) is drawn from the supply.

Each FET inside the device is controlled by a corresponding input pin on the DRV8850. The condition where both HS and LS FETs are turned on at the same time is not allowed. During this input condition both the HS and LS FETs turn off.