ZHCSC12D November   2013  – October 2019 DRV8850

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
    1.     Device Images
      1.      简化原理图
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Supervisor
      2. 7.3.2 Bridge Control
      3. 7.3.3 Current Sensing – VPROPI
      4. 7.3.4 Slew-Rate Control
      5. 7.3.5 Dead Time
      6. 7.3.6 Propagation Delay
      7. 7.3.7 Power Supplies and Input Pins
      8. 7.3.8 LDO Voltage Regulator
      9. 7.3.9 Protection Circuits
        1. 7.3.9.1 Overcurrent Protection (OCP)
        2. 7.3.9.2 Thermal Shutdown (TSD)
        3. 7.3.9.3 Undervoltage Lockout (UVLO)
        4. 7.3.9.4 Overvoltage Lockout (OVLO)
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Motor Voltage
        2. 8.2.2.2 Drive Current
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
      1. 10.3.1 Power Dissipation
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.3.5 Dead Time

The dead time (tDEAD) is measured as the time when OUTx is Hi-Z between turning off one of the H-bridge FETs and turning on the other. For example, the output is Hi-Z between turning off the high-side FET and turning on the low-side FET. When driving current out of the pin, the output is observed to fall to one diode drop below ground during dead time. When driving current into the pin, the output is observed to rise to one diode drop above VCC.

The DRV8850 has an analog dead time of approximately 100 ns. In addition to this analog dead time, the output is Hi-Z when the FET gate voltage is less than the threshold voltage. The total dead time depends on the SR resistor setting because a portion of the FET gate ramp includes the observable dead time.