ZHCSC12D November   2013  – October 2019 DRV8850

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
    1.     Device Images
      1.      简化原理图
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Supervisor
      2. 7.3.2 Bridge Control
      3. 7.3.3 Current Sensing – VPROPI
      4. 7.3.4 Slew-Rate Control
      5. 7.3.5 Dead Time
      6. 7.3.6 Propagation Delay
      7. 7.3.7 Power Supplies and Input Pins
      8. 7.3.8 LDO Voltage Regulator
      9. 7.3.9 Protection Circuits
        1. 7.3.9.1 Overcurrent Protection (OCP)
        2. 7.3.9.2 Thermal Shutdown (TSD)
        3. 7.3.9.3 Undervoltage Lockout (UVLO)
        4. 7.3.9.4 Overvoltage Lockout (OVLO)
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Motor Voltage
        2. 8.2.2.2 Drive Current
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
      1. 10.3.1 Power Dissipation
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.6 Timing Requirements

TA = 25°C, VCC = 4.2 V, RL = 2 Ω(1)
MIN NOM MAX UNIT
tR, tF Rise and fall time (measured at OUTx) RSR connected to GND 70 ns
RSR = 24 kΩ 0.7 µs
RSR = 2.4 MΩ 70 µs
tDELAY Propagation delay (measured as time between input edge to output change) RSR connected to GND 500 ns
RSR = 24 kΩ 750 ns
RSR = 2.4 MΩ 50 µs
tDEAD Dead time (measured as time OUTx FET is Hi-Z) Low-side slow decay
LS OFF to HS ON		 RSR short to GND 400 ns
RSR = 24 kΩ 2.6 µs
RSR = 2.4 MΩ 110 µs
Low-side slow decay
HS OFF to LS ON		 RSR short to GND 400 ns
RSR = 24 kΩ 2.6 µs
RSR = 2.4 MΩ 110 µs
High-side slow decay or fast decay
HS OFF to LS ON		 RSR short to GND 400 ns
RSR = 24 kΩ 2.6 µs
RSR = 2.4 MΩ 110 µs
High-side slow decay or fast decay
LS OFF to HS ON		 RSR short to GND 600 ns
RSR = 24 kΩ 3.9 µs
RSR = 2.4 MΩ 165 µs
(1) Rise and fall time measured from 10 to 90% VCC