ZHCSR67 July   2020 DRV8353M

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions—40-Pin DRV8353M Devices
  7. 7 Absolute Maximum Ratings
  8. 8 ESD Ratings
  9. 9 Recommended Operating Conditions
  10. 10Thermal Information
  11. 11Electrical Characteristics
  12. 12SPI Timing Requirements
  13. 13Detailed Description
    1. 13.1 Overview
    2. 13.2 Functional Block Diagram
    3. 13.3 Feature Description
      1. 13.3.1 Three Phase Smart Gate Drivers
        1. 13.3.1.1 PWM Control Modes
          1. 13.3.1.1.1 6x PWM Mode (PWM_MODE = 00b or MODE Pin Tied to AGND)
          2. 13.3.1.1.2 3x PWM Mode (PWM_MODE = 01b or MODE Pin = 47 kΩ to AGND)
          3. 13.3.1.1.3 1x PWM Mode (PWM_MODE = 10b or MODE Pin = Hi-Z)
          4. 13.3.1.1.4 Independent PWM Mode (PWM_MODE = 11b or MODE Pin Tied to DVDD)
        2. 13.3.1.2 Device Interface Modes
          1. 13.3.1.2.1 Serial Peripheral Interface (SPI)
          2. 13.3.1.2.2 Hardware Interface
        3. 13.3.1.3 Gate Driver Voltage Supplies and Input Supply Configurations
        4. 13.3.1.4 Smart Gate Drive Architecture
          1. 13.3.1.4.1 IDRIVE: MOSFET Slew-Rate Control
          2. 13.3.1.4.2 TDRIVE: MOSFET Gate Drive Control
          3. 13.3.1.4.3 Propagation Delay
          4. 13.3.1.4.4 MOSFET VDS Monitors
          5. 13.3.1.4.5 VDRAIN Sense and Reference Pin
      2. 13.3.2 DVDD Linear Voltage Regulator
      3. 13.3.3 Pin Diagrams
      4. 13.3.4 Low-Side Current-Shunt Amplifiers
        1. 13.3.4.1 Bidirectional Current Sense Operation
        2. 13.3.4.2 Unidirectional Current Sense Operation (SPI only)
        3. 13.3.4.3 Amplifier Calibration Modes
        4. 13.3.4.4 MOSFET VDS Sense Mode (SPI Only)
      5. 13.3.5 Gate Driver Protective Circuits
        1. 13.3.5.1 VM Supply and VDRAIN Undervoltage Lockout (UVLO)
        2. 13.3.5.2 VCP Charge-Pump and VGLS Regulator Undervoltage Lockout (GDUV)
        3. 13.3.5.3 MOSFET VDS Overcurrent Protection (VDS_OCP)
          1. 13.3.5.3.1 VDS Latched Shutdown (OCP_MODE = 00b)
          2. 13.3.5.3.2 VDS Automatic Retry (OCP_MODE = 01b)
          3. 13.3.5.3.3 VDS Report Only (OCP_MODE = 10b)
          4. 13.3.5.3.4 VDS Disabled (OCP_MODE = 11b)
        4. 13.3.5.4 VSENSE Overcurrent Protection (SEN_OCP)
          1. 13.3.5.4.1 VSENSE Latched Shutdown (OCP_MODE = 00b)
          2. 13.3.5.4.2 VSENSE Automatic Retry (OCP_MODE = 01b)
          3. 13.3.5.4.3 VSENSE Report Only (OCP_MODE = 10b)
          4. 13.3.5.4.4 VSENSE Disabled (OCP_MODE = 11b or DIS_SEN = 1b)
        5. 13.3.5.5 Gate Driver Fault (GDF)
        6. 13.3.5.6 Overcurrent Soft Shutdown (OCP Soft)
        7. 13.3.5.7 Thermal Warning (OTW)
        8. 13.3.5.8 Thermal Shutdown (OTSD)
        9. 13.3.5.9 Fault Response Table
    4. 13.4 Device Functional Modes
      1. 13.4.1 Gate Driver Functional Modes
        1. 13.4.1.1 Sleep Mode
        2. 13.4.1.2 Operating Mode
        3. 13.4.1.3 Fault Reset (CLR_FLT or ENABLE Reset Pulse)
    5. 13.5 Programming
      1. 13.5.1 SPI Communication
        1. 13.5.1.1 SPI
          1. 13.5.1.1.1 SPI Format
    6. 13.6 Register Maps
      1. 13.6.1 Status Registers
        1. 13.6.1.1 Fault Status Register 1 (address = 0x00h)
        2. 13.6.1.2 Fault Status Register 2 (address = 0x01h)
      2. 13.6.2 Control Registers
        1. 13.6.2.1 Driver Control Register (address = 0x02h)
        2. 13.6.2.2 Gate Drive HS Register (address = 0x03h)
        3. 13.6.2.3 Gate Drive LS Register (address = 0x04h)
        4. 13.6.2.4 OCP Control Register (address = 0x05h)
        5. 13.6.2.5 CSA Control Register (address = 0x06h)
        6. 13.6.2.6 Driver Configuration Register (address = 0x07h)
  14. 14Application and Implementation
    1. 14.1 Application Information
    2. 14.2 Typical Application
      1. 14.2.1 Primary Application
        1. 14.2.1.1 Design Requirements
        2. 14.2.1.2 Detailed Design Procedure
          1. 14.2.1.2.1 External MOSFET Support
            1. 14.2.1.2.1.1 MOSFET Example
          2. 14.2.1.2.2 IDRIVE Configuration
            1. 14.2.1.2.2.1 IDRIVE Example
          3. 14.2.1.2.3 VDS Overcurrent Monitor Configuration
            1. 14.2.1.2.3.1 VDS Overcurrent Example
          4. 14.2.1.2.4 Sense-Amplifier Bidirectional Configuration
            1. 14.2.1.2.4.1 Sense-Amplifier Example
          5. 14.2.1.2.5 Single Supply Power Dissipation
          6. 14.2.1.2.6 Single Supply Power Dissipation Example
        3. 14.2.1.3 Application Curves
  15. 15Power Supply Recommendations
    1. 15.1 Bulk Capacitance Sizing
  16. 16Layout
    1. 16.1 Layout Guidelines
    2. 16.2 Layout Example
  17. 17Device and Documentation Support
    1. 17.1 Device Support
      1. 17.1.1 Device Nomenclature
    2. 17.2 Documentation Support
      1. 17.2.1 Related Documentation
    3. 17.3 Receiving Notification of Documentation Updates
    4. 17.4 Support Resources
    5. 17.5 Trademarks
    6. 17.6 Electrostatic Discharge Caution
    7. 17.7 Glossary
  18. 18Mechanical, Packaging, and Orderable Information

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13.3.5.4 VSENSE Overcurrent Protection (SEN_OCP)

Half-bridge overcurrent is also monitored by sensing the voltage drop across the external current-sense resistor with the SP pin. If at any time, the voltage on the SP input of the current-sense amplifier exceeds the VSEN_OCP threshold for longer than the tOCP_DEG deglitch time, a SEN_OCP event is recognized and action is done according to the OCP_MODE. On hardware interface devices, the VSENSE threshold is fixed at 1 V, tOCP_DEG is fixed at 4 µs, and the OCP_MODE for VSENSE is fixed for 8-ms automatic retry. On SPI devices, the VSENSE threshold is set through the SEN_LVL SPI register, the tOCP_DEG is set through the OCP_DEG SPI register, and the OCP_MODE bit can operate in four different modes: VSENSE latched shutdown, VSENSE automatic retry, VSENSE report only, and VSENSE disabled.

The VSENSE overcurrent protection operates in cycle-by-cycle (CBC) mode by default. This can be disabled on SPI device variants through the SPI registers. When in cycle-by-cycle (CBC) mode a new rising edge on the PWM inputs will clear an existing overcurrent fault.

Additionally, on SPI devices the OCP_ACT register setting can be set to change the SEN_OCP overcurrent response between linked and individual shutdown modes. When OCP_ACT is 0, a SEN_OCP fault will only effect the half-bridge in which it occurred. When OCP_ACT is 1, all three half-bridges will respond to a SEN_OCP fault on any of the other half-bridges. OCP_ACT defaults to 0, individual shutdown mode.