ZHCSR67 July   2020 DRV8353M

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions—40-Pin DRV8353M Devices
  7. 7 Absolute Maximum Ratings
  8. 8 ESD Ratings
  9. 9 Recommended Operating Conditions
  10. 10Thermal Information
  11. 11Electrical Characteristics
  12. 12SPI Timing Requirements
  13. 13Detailed Description
    1. 13.1 Overview
    2. 13.2 Functional Block Diagram
    3. 13.3 Feature Description
      1. 13.3.1 Three Phase Smart Gate Drivers
        1. 13.3.1.1 PWM Control Modes
          1. 13.3.1.1.1 6x PWM Mode (PWM_MODE = 00b or MODE Pin Tied to AGND)
          2. 13.3.1.1.2 3x PWM Mode (PWM_MODE = 01b or MODE Pin = 47 kΩ to AGND)
          3. 13.3.1.1.3 1x PWM Mode (PWM_MODE = 10b or MODE Pin = Hi-Z)
          4. 13.3.1.1.4 Independent PWM Mode (PWM_MODE = 11b or MODE Pin Tied to DVDD)
        2. 13.3.1.2 Device Interface Modes
          1. 13.3.1.2.1 Serial Peripheral Interface (SPI)
          2. 13.3.1.2.2 Hardware Interface
        3. 13.3.1.3 Gate Driver Voltage Supplies and Input Supply Configurations
        4. 13.3.1.4 Smart Gate Drive Architecture
          1. 13.3.1.4.1 IDRIVE: MOSFET Slew-Rate Control
          2. 13.3.1.4.2 TDRIVE: MOSFET Gate Drive Control
          3. 13.3.1.4.3 Propagation Delay
          4. 13.3.1.4.4 MOSFET VDS Monitors
          5. 13.3.1.4.5 VDRAIN Sense and Reference Pin
      2. 13.3.2 DVDD Linear Voltage Regulator
      3. 13.3.3 Pin Diagrams
      4. 13.3.4 Low-Side Current-Shunt Amplifiers
        1. 13.3.4.1 Bidirectional Current Sense Operation
        2. 13.3.4.2 Unidirectional Current Sense Operation (SPI only)
        3. 13.3.4.3 Amplifier Calibration Modes
        4. 13.3.4.4 MOSFET VDS Sense Mode (SPI Only)
      5. 13.3.5 Gate Driver Protective Circuits
        1. 13.3.5.1 VM Supply and VDRAIN Undervoltage Lockout (UVLO)
        2. 13.3.5.2 VCP Charge-Pump and VGLS Regulator Undervoltage Lockout (GDUV)
        3. 13.3.5.3 MOSFET VDS Overcurrent Protection (VDS_OCP)
          1. 13.3.5.3.1 VDS Latched Shutdown (OCP_MODE = 00b)
          2. 13.3.5.3.2 VDS Automatic Retry (OCP_MODE = 01b)
          3. 13.3.5.3.3 VDS Report Only (OCP_MODE = 10b)
          4. 13.3.5.3.4 VDS Disabled (OCP_MODE = 11b)
        4. 13.3.5.4 VSENSE Overcurrent Protection (SEN_OCP)
          1. 13.3.5.4.1 VSENSE Latched Shutdown (OCP_MODE = 00b)
          2. 13.3.5.4.2 VSENSE Automatic Retry (OCP_MODE = 01b)
          3. 13.3.5.4.3 VSENSE Report Only (OCP_MODE = 10b)
          4. 13.3.5.4.4 VSENSE Disabled (OCP_MODE = 11b or DIS_SEN = 1b)
        5. 13.3.5.5 Gate Driver Fault (GDF)
        6. 13.3.5.6 Overcurrent Soft Shutdown (OCP Soft)
        7. 13.3.5.7 Thermal Warning (OTW)
        8. 13.3.5.8 Thermal Shutdown (OTSD)
        9. 13.3.5.9 Fault Response Table
    4. 13.4 Device Functional Modes
      1. 13.4.1 Gate Driver Functional Modes
        1. 13.4.1.1 Sleep Mode
        2. 13.4.1.2 Operating Mode
        3. 13.4.1.3 Fault Reset (CLR_FLT or ENABLE Reset Pulse)
    5. 13.5 Programming
      1. 13.5.1 SPI Communication
        1. 13.5.1.1 SPI
          1. 13.5.1.1.1 SPI Format
    6. 13.6 Register Maps
      1. 13.6.1 Status Registers
        1. 13.6.1.1 Fault Status Register 1 (address = 0x00h)
        2. 13.6.1.2 Fault Status Register 2 (address = 0x01h)
      2. 13.6.2 Control Registers
        1. 13.6.2.1 Driver Control Register (address = 0x02h)
        2. 13.6.2.2 Gate Drive HS Register (address = 0x03h)
        3. 13.6.2.3 Gate Drive LS Register (address = 0x04h)
        4. 13.6.2.4 OCP Control Register (address = 0x05h)
        5. 13.6.2.5 CSA Control Register (address = 0x06h)
        6. 13.6.2.6 Driver Configuration Register (address = 0x07h)
  14. 14Application and Implementation
    1. 14.1 Application Information
    2. 14.2 Typical Application
      1. 14.2.1 Primary Application
        1. 14.2.1.1 Design Requirements
        2. 14.2.1.2 Detailed Design Procedure
          1. 14.2.1.2.1 External MOSFET Support
            1. 14.2.1.2.1.1 MOSFET Example
          2. 14.2.1.2.2 IDRIVE Configuration
            1. 14.2.1.2.2.1 IDRIVE Example
          3. 14.2.1.2.3 VDS Overcurrent Monitor Configuration
            1. 14.2.1.2.3.1 VDS Overcurrent Example
          4. 14.2.1.2.4 Sense-Amplifier Bidirectional Configuration
            1. 14.2.1.2.4.1 Sense-Amplifier Example
          5. 14.2.1.2.5 Single Supply Power Dissipation
          6. 14.2.1.2.6 Single Supply Power Dissipation Example
        3. 14.2.1.3 Application Curves
  15. 15Power Supply Recommendations
    1. 15.1 Bulk Capacitance Sizing
  16. 16Layout
    1. 16.1 Layout Guidelines
    2. 16.2 Layout Example
  17. 17Device and Documentation Support
    1. 17.1 Device Support
      1. 17.1.1 Device Nomenclature
    2. 17.2 Documentation Support
      1. 17.2.1 Related Documentation
    3. 17.3 Receiving Notification of Documentation Updates
    4. 17.4 Support Resources
    5. 17.5 Trademarks
    6. 17.6 Electrostatic Discharge Caution
    7. 17.7 Glossary
  18. 18Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息
13.3.1.4.1 IDRIVE: MOSFET Slew-Rate Control

The IDRIVE component implements adjustable gate-drive current to control the MOSFET VDS slew rates. The MOSFET VDS slew rates are a critical factor for optimizing radiated emissions, energy and duration of diode recovery spikes, dV/dt gate turnon leading to shoot-through, and switching voltage transients related to parasitics in the external half-bridge. IDRIVE operates on the principal that the MOSFET VDS slew rates are predominately determined by the rate of gate charge (or gate current) delivered during the MOSFET QGD or Miller charging region. By allowing the gate driver to adjust the gate current, it can effectively control the slew rate of the external power MOSFETs.

IDRIVE allows the DRV8353M family of devices to dynamically switch between gate drive currents either through a register setting on SPI devices or the IDRIVE pin on hardware interface devices. The SPI devices provide 16 IDRIVE settings ranging between 50-mA to 1-A source and 100-mA to 2-A sink. Hardware interface devices provides 7 IDRIVE settings between the same ranges. The gate drive current setting is delivered to the gate during the turnon and turnoff of the external power MOSFET for the tDRIVE duration. After the MOSFET turnon or turnoff, the gate driver switches to a smaller hold IHOLD current to improve the gate driver efficiency. Additional details on the IDRIVE settings are described in the Section 13.6 section for the SPI devices and in the Section 13.3.3 section for the hardware interface devices.