ZHCSC19B January   2014  – March 2022 CSD25310Q2

PRODUCTION DATA  

  1. 1特性
  2. 2应用
  3. 3说明
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q2 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 Q2 Tape and Reel Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DQK|6
散热焊盘机械数据 (封装 | 引脚)
订购信息

Electrical Characteristics

TA = 25°C, unless otherwise specified
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-Source VoltageVGS = 0 V, ID = –250 μA–20V
IDSSDrain-to-Source Leakage CurrentVGS = 0 V, VDS = –16 V–1μA
IGSSGate-to-Source Leakage CurrentVDS = 0 V, VGS = –8 V–100nA
VGS(th)Gate-to-Source Threshold VoltageVDS = VGS, IDS = –250 μA–0.55–0.85–1.10V
RDS(on)Drain-to-Source On ResistanceVGS = –1.8 V, IDS = –5 A59.089.0mΩ
VGS = –2.5 V, IDS = –5 A27.032.5mΩ
VGS = –4.5 V, IDS = –5 A19.923.9mΩ
gfsTransconductanceVDS = –16 V, IDS = –5 A34S
DYNAMIC CHARACTERISTICS
CISSInput CapacitanceVGS = 0 V, VDS = –10 V, ƒ = 1 MHz504655pF
COSSOutput Capacitance281365pF
CRSSReverse Transfer Capacitance16.721.7pF
RgSeries Gate Resistance1.9
QgGate Charge Total (–4.5 V)VDS = –10 V, IDS = –5 A3.64.7nC
QgdGate Charge Gate to Drain0.5nC
QgsGate Charge Gate to Source1.1nC
Qg(th)Gate Charge at Vth0.6nC
QOSSOutput ChargeVDS = –10 V, VGS = 0 V5.0nC
td(on)Turn On Delay TimeVDS = –10 V, VGS = –4.5 V, IDS = –5 A
RG = 2 Ω
8ns
trRise Time15ns
td(off)Turn Off Delay Time15ns
tfFall Time5ns
DIODE CHARACTERISTICS
VSDDiode Forward VoltageIDS = –5 A, VGS = 0 V–0.8–1.0V
QrrReverse Recovery ChargeVDD = –10 V, IF = –5 A, di/dt = 200 A/μs9.2nC
trrReverse Recovery Time13ns