ZHCSC19C January   2014  – February 2025 CSD25310Q2

PRODUCTION DATA  

  1.   1
  2. 1特性
  3. 2应用
  4. 3说明
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 第三方产品免责声明
    2. 5.2 Documentation Support
      1. 5.2.1 Related Documentation
    3. 5.3 接收文档更新通知
    4. 5.4 支持资源
    5. 5.5 Trademarks
    6. 5.6 静电放电警告
    7. 5.7 术语表
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

4.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)

CSD25310Q2 Transient Thermal Impedance
Figure 4-1 Transient Thermal Impedance
CSD25310Q2 Saturation Characteristics
Figure 4-2 Saturation Characteristics
CSD25310Q2 Gate Charge
Figure 4-4 Gate Charge
CSD25310Q2 Threshold Voltage vs Temperature
Figure 4-6 Threshold Voltage vs Temperature
CSD25310Q2 Normalized On-State Resistance vs Temperature
Figure 4-8 Normalized On-State Resistance vs Temperature
CSD25310Q2 Maximum Safe Operating Area
Figure 4-10 Maximum Safe Operating Area
CSD25310Q2 Transfer Characteristics
Figure 4-3 Transfer Characteristics
CSD25310Q2 Capacitance
Figure 4-5 Capacitance
CSD25310Q2 On-State Resistance vs Gate-to-Source Voltage
Figure 4-7 On-State Resistance vs Gate-to-Source Voltage
CSD25310Q2 Typical Diode Forward Voltage
Figure 4-9 Typical Diode Forward Voltage
CSD25310Q2 Maximum Drain Current vs Temperature
Figure 4-11 Maximum Drain Current vs Temperature