ZHCS764B February   2012  – September 2022 CSD25211W1015

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Electrical Characteristics
  6. 6 Thermal Characteristics
  7. 7 Typical MOSFET Characteristics
  8. 8 Mechanical Data
    1. 8.1 CSD25211W1015 Package Dimensions
    2. 8.2 Land Pattern Recommendation
  9. 9 静电放电警告
  10. 10Device and Documentation Support
    1. 10.1 第三方产品免责声明
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • YZC|6
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)

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Figure 7-1 Transient Thermal Impedance
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Figure 7-2 Saturation Characteristics
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Figure 7-4 Gate Charge
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Figure 7-6 Threshold Voltage vs Temperature
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Figure 7-8 Normalized On Resistance vs Temperature
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Figure 7-10 Maximum Safe Operating Area
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Figure 7-3 Transfer Characteristics
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Figure 7-5 Capacitance
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Figure 7-7 On Resistance vs Gate Voltage
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Figure 7-9 Typical Diode Forward Voltage
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Figure 7-11 Single Pulse Unclamped Inductive Switching
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Figure 7-12 Maximum Drain Current vs Temperature