ZHCSFD2B August   2016  – February 2022 CSD23285F5

PRODUCTION DATA  

  1. 1特性
  2. 2应用
  3. 3说明
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Trademarks
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

封装选项

机械数据 (封装 | 引脚)
  • YJK|3
散热焊盘机械数据 (封装 | 引脚)
订购信息

Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)

GUID-6C9AB314-5369-46B4-92BE-A3F32C0339AF-low.gifFigure 5-1 Saturation Characteristics
GUID-CC1F0301-BA25-4F70-881E-747EED1E86BA-low.pngFigure 5-3 Transient Thermal Impedance
GUID-E13689E7-0BA2-47A5-BF10-FA8AADF8D619-low.gif
VDS = –5 V
Figure 5-2 Transfer Characteristics
GUID-1A1FF119-C596-472A-8CF4-89669F987BBF-low.gif
ID = –1 AVDS = –6 V
Figure 5-4 Gate Charge
GUID-7381428C-5941-46C8-9F21-72BBC9A77B74-low.gif
ID = –250 µA
Figure 5-6 Threshold Voltage vs Temperature
GUID-0C6257C7-79EA-4F25-A784-C3433168AEC3-low.gif
ID = –1 A
Figure 5-8 Normalized On-State Resistance vs Temperature
GUID-49F20F97-F01F-4214-8C53-DF7152373A58-low.gif
Single pulse, typ RθJA = 245°C/W
Figure 5-10 Maximum Safe Operating Area (SOA)
GUID-B4F05593-7026-4A8C-8F76-4001DBA19EDB-low.gifFigure 5-5 Capacitance
GUID-C09BCE8F-8BAB-4624-9F61-072C8100FAA2-low.gifFigure 5-7 On-State Resistance vs Gate-to-Source Voltage
GUID-D397CFA6-A0A9-40D5-B561-4414D05DC93C-low.gifFigure 5-9 Typical Diode Forward Voltage
GUID-79A6BE62-3423-4BAC-A72E-CD5022E5DF18-low.gif
Min Cu RθJA = 245°C/W
Figure 5-11 Maximum Drain Current vs Temperature