ZHCSFD2B August 2016 – February 2022 CSD23285F5
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-source voltage | VGS = 0 V, IDS = –250 μA | –12 | V | |||
| IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = –9.6 V | –100 | nA | |||
| IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = –5 V | –25 | nA | |||
| VGS(th) | Gate-to-source threshold voltage | VDS = VGS, IDS = –250 μA | –0.40 | –0.65 | –0.95 | V | |
| RDS(on) | Drain-to-source on-resistance | VGS = –1.5 V, IDS = –1 A | 64 | 130 | mΩ | ||
| VGS = –1.8 V, IDS = –1 A | 49 | 80 | |||||
| VGS = –2.5 V, IDS = –1 A | 38 | 47 | |||||
| VGS = –4.5 V, IDS = –1 A | 29 | 35 | |||||
| gfs | Transconductance | VDS = –1.2 V, IDS = –1 A | 8.9 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Ciss | Input capacitance | VGS = 0 V, VDS = –6 V, ƒ = 1 MHz | 483 | 628 | pF | ||
| Coss | Output capacitance | 305 | 397 | pF | |||
| Crss | Reverse transfer capacitance | 37 | 48 | pF | |||
| RG | Series gate resistance | 17 | Ω | ||||
| Qg | Gate charge total (–4.5 V) | VDS = –6 V, IDS = –1 A | 3.2 | 4.2 | nC | ||
| Qgd | Gate charge gate-to-drain | 0.48 | nC | ||||
| Qgs | Gate charge gate-to-source | 0.66 | nC | ||||
| Qg(th) | Gate charge at Vth | 0.40 | nC | ||||
| Qoss | Output charge | VDS = –6 V, VGS = 0 V | 4.8 | nC | |||
| td(on) | Turnon delay time | VDS = –6 V, VGS = –4.5 V, IDS = –1 A, RG = 2 Ω | 15 | ns | |||
| tr | Rise time | 5 | ns | ||||
| td(off) | Turnoff delay time | 30 | ns | ||||
| tf | Fall time | 13 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode forward voltage | ISD = –1 A, VGS = 0 V | –0.73 | –1 | V | ||