ZHCSFD2B August   2016  – February 2022 CSD23285F5

PRODUCTION DATA  

  1. 1特性
  2. 2应用
  3. 3说明
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Trademarks
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

封装选项

机械数据 (封装 | 引脚)
  • YJK|3
散热焊盘机械数据 (封装 | 引脚)
订购信息

Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-source voltageVGS = 0 V, IDS = –250 μA–12V
IDSSDrain-to-source leakage currentVGS = 0 V, VDS = –9.6 V–100nA
IGSSGate-to-source leakage currentVDS = 0 V, VGS = –5 V–25nA
VGS(th)Gate-to-source threshold voltageVDS = VGS, IDS = –250 μA–0.40–0.65–0.95V
RDS(on)Drain-to-source on-resistanceVGS = –1.5 V, IDS = –1 A64130mΩ
VGS = –1.8 V, IDS = –1 A4980
VGS = –2.5 V, IDS = –1 A3847
VGS = –4.5 V, IDS = –1 A2935
gfsTransconductanceVDS = –1.2 V, IDS = –1 A8.9S
DYNAMIC CHARACTERISTICS
CissInput capacitanceVGS = 0 V, VDS = –6 V,
ƒ = 1 MHz
483628pF
CossOutput capacitance305397pF
CrssReverse transfer capacitance3748pF
RGSeries gate resistance17
QgGate charge total (–4.5 V)VDS = –6 V, IDS = –1 A3.24.2nC
QgdGate charge gate-to-drain0.48nC
QgsGate charge gate-to-source0.66nC
Qg(th)Gate charge at Vth0.40nC
QossOutput chargeVDS = –6 V, VGS = 0 V4.8nC
td(on)Turnon delay timeVDS = –6 V, VGS = –4.5 V,
IDS = –1 A, RG = 2 Ω
15ns
trRise time5ns
td(off)Turnoff delay time30ns
tfFall time13ns
DIODE CHARACTERISTICS
VSDDiode forward voltageISD = –1 A, VGS = 0 V–0.73–1V