ZHCSEX4B April   2016  – February 2022 CSD23280F3

PRODUCTION DATA  

  1. 1特性
  2. 2应用
  3. 3说明
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Trademarks
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • YJM|3
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-source voltageVGS = 0 V, IDS = –250 μA–12V
IDSSDrain-to-source leakage currentVGS = 0 V, VDS = –9.6 V–50nA
IGSSGate-to-source leakage currentVDS = 0 V, VGS = –5 V–25nA
VGS(th)Gate-to-source threshold voltageVDS = VGS, IDS = –250 μA–0.40–0.65–0.95V
RDS(on)Drain-to-source on-resistanceVGS = –1.5 V, IDS = –0.1 A230399mΩ
VGS = –1.8 V, IDS = –0.4 A180250
VGS = –2.5 V, IDS = –0.4 A129165
VGS = –4.5 V, IDS = –0.4 A97116
gfsTransconductanceVDS = –1.2 V, IDS = –0.4 A3S
DYNAMIC CHARACTERISTICS
CissInput capacitanceVGS = 0 V, VDS = –6 V,
ƒ = 1 MHz		180234pF
CossOutput capacitance7395pF
CrssReverse transfer Capacitance8.511.1pF
RGSeries gate resistance9Ω
QgGate charge total (4.5 V)VDS = –6 V, IDS = –0.4 A0.951.23nC
QgdGate charge gate-to-drain0.068nC
QgsGate charge gate-to-source0.30nC
Qg(th)Gate charge at Vth0.15nC
QossOutput chargeVDS = –6 V, VGS = 0 V1.07nC
td(on)Turnon delay timeVDS = –6 V, VGS = –4.5 V,
IDS = –0.4 A, RG = 0 Ω		8ns
trRise time4ns
td(off)Turnoff delay time21ns
tfFall time8ns
DIODE CHARACTERISTICS
VSDDiode forward voltageISD = –0.4 A, VGS = 0 V–0.73–1.0V