ZHCSEX4B 数据表 | 德州仪器 TI.com.cn

ZHCSEX4B April 2016 – February 2022 CSD23280F3

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

5.3 Typical MOSFET Characteristics

T_A = 25°C (unless otherwise stated)

Figure 5-1 Saturation Characteristics

Figure 5-3 Transient Thermal Impedance

	V_DS = –5 V

Figure 5-2 Transfer Characteristics

	V_DS = –6 V	I_D = –0.4 A

Figure 5-4 Gate Charge

	I_D = –250 µA

Figure 5-6 Threshold Voltage vs Temperature

	V_GS = –4.5 V	I_D = –0.4 A

Figure 5-8 Normalized On-State Resistance vs Temperature

	Single pulse, max R_θJA = 255°C/W

Figure 5-10 Maximum Safe Operating Area

Figure 5-5 Capacitance

Figure 5-7 On-State Resistance vs Gate-to-Source Voltage

Figure 5-9 Typical Diode Forward Voltage

Figure 5-11 Maximum Drain Current vs Temperature