4 修订历史记录

Changes from F Revision (October 2016) to G Revision

• Changed 温度范围：从 150°C 至 175°CGo
• Changed 使用 175°C 数据更改了 I_DM，将 370A 更改为 400AGo
• Changed 使用 175°C 数据更改了 P_D，将 3.1W 更改为 3.8WGo
• Changed Figure 6 to extend to 175°CGo
• Changed Figure 8 to extend to 175°CGo
• Changed Figure 10 using 175°C dataGo
• Changed Figure 12 to extend to 175°CGo

Changes from E Revision (August 2015) to F Revision

• Changed 125°C RDS(on) 与 VGS 对比 曲线，以反映典型部件特性Go
• Changed the 125°C curve in Figure 7 to reflect typical part characterizationGo
• Added Receiving Notification of Documentation Updates 部分添加到器件和文档支持部分Go

Changes from D Revision (May 2015) to E Revision

• 将说明部分的器件尺寸 单位 从 m 更正为 mm。Go
• 将封装类型更正为 SON。Go

Changes from C Revision (March 2015) to D Revision

• 添加了 社区资源。Go

Changes from B Revision (October 2012) to C Revision

• 在标题中添加了部件编号。Go
• Changed Q_g 值至 36nC（10V 条件下测量）。Go
• 在订购信息中添加了 7 英寸卷带。Go
• 将最大脉冲电流增加至 370A。Go
• 针对外壳温度保持在 25°C 时的最大功率耗散添加了一行内容。Go
• 更新了脉冲电流条件。Go
• Updated Figure 1 to show Z_θJC curves.Go
• Updated Figure 10Go
• Updated Figure 12. Go

Changes from A Revision (June 2012) to B Revision

• Changed the Transconductance TYP value From: 177 S To: 128 S.Go
• Changed the Turn On and Turn Off Delay Time, Rise and Fall Time Test. Conditions From: I_DS = 22 A, R_G = 2 Ω To: I_DS = 22 A, R_G = 0 Ω. Go
• Changed the Q_rr Reverse Recovery Charge TYP value From: 68 nC To: 100 nC. Go

Changes from * Revision (June 2012) to A Revision

• Added T_A = 25°C 至产品概要表Go